CJK3400AH

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400AH N-Channel Enhancement Mode Field Effect Transistor V(BR)DSS ID RDS(on)MAX 27mΩ@10V 32 mΩ@4.5V  30 V SOT-23-3L 5.8A 48mΩ@2.5V 1. GATE 2. SOURCE 3. DRAIN D FEATURE APPLICATION z High dense cell design for extremely low RDS(ON) z Load/Power Switching z Exceptional on-resistance and maximum DC current capability z Interfacing Switching Equivalent Circuit MARKING .R0H Solid dot = Green molding compound device, if none,the normal device. Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5.8 A Drain Current-Pulsed (note 1) IDM 30 A Power Dissipation PD 450 mW RθJA 313 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (note 2) www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V,VGS = 0V Gate-source leakage current IGSS VGS =±12V, VDS = 0V 30 V 1 µA ±100 nA On characteristics (note 3) Drain-source on-resistance RDS(on) (note 3) Forward tranconductance gFS Gate threshold voltage Dynamic Characteristics VGS(th) 19 27 mΩ VGS =4.5V, ID = 5A 20 32 mΩ VGS =2.5V,ID= 4A 25 48 mΩ VDS =5V, ID =5A VDS =VGS, ID =250µA 8 S 0.7 1.4 V 1155 pF (note 4,5) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching Characteristics VGS =10V, ID = 5.8A VDS =15V,VGS =0V,f =1MHz VDS =0V,VGS =0V,f =1MHz 108 pF 84 pF 3.6 Ω 5 ns (note 4,5) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr VGS=10V,VDS=15V, 7 ns td(off) RL=2.7Ω,RGEN=3Ω 40 ns 6 ns 1 V tf Drain-source diode characteristics and maximum ratings Diode forward voltage (note 3) VSD IS=1A,VGS=0V Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Output Characteristics Transfer Characteristics 20 14 Ta=25℃ VDS=3V VGS=3V,4V,5V,6V Pulsed 18 Pulsed 12 10 ID (A) 14 12 DRAIN CURRENT ID DRAIN CURRENT (A) 16 VGS=2V 10 8 6 4 VGS=1.5V Ta=25℃ Ta=100℃ 8 6 4 2 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE VDS 4.0 4.5 0 0.0 5.0 0.5 (V) 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE 2.5 VGS RDS(ON) —— VGS RDS(ON) —— ID 150 30 Pulsed Ta=25℃ Pulsed ID=5A 125 (m) VGS=2.5V (m) RDS(ON) 25 ON-RESISTANCE RDS(ON) ON-RESISTANCE 3.0 (V) VGS=4.5V 20 VGS=10V 100 75 Ta=100℃ 50 25 Ta=25℃ 15 1 2 3 4 DRAIN CURRENT 5 ID 0 6 0 (A) 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE 7 VGS 8 9 10 (V) Threshold Voltage IS —— VSD 7 1.4 Pulsed VTH 1 Ta=75℃ Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1.2 Ta=25℃ 0.1 1.0 ID=250uA 0.8 0.6 0.4 0.2 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.4 1.6 0.0 25 1.8 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 (℃ ) Rev. - 1.0      Symbol A A1 A2 b c D E1 E e e1 L Κ Dimensions In Millimeters Max. Min. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Max. Min. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8°     NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0      www.jscj-elec.com 5 Rev. - 1.0