CJK3401A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401A P-Channel Enhancement Mode Field Effect Transistor V(BR)DSS ID RDS(on)MAX SOT-23-3L 60 mΩ@-10V  -4.2A  70 mΩ@-4.5V -30V 85 mΩ@-2.5V 1. GATE 2. SOURCE 3. DRAIN D FEATURE High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum z APPLICATION z Load Switch for Portable Devices z DC/DC Converter DC current capability Equivalent Circuit MARKING D G S Solid dot = Green molding compound device, if none,the normal device. Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -4.2 A Power Dissipation PD 450 mW RθJA 313 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (t