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CJL8810

CJL8810

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    SOT23-6

  • 描述:

    MOSFETs Id=7A Vdss=20V 2个N-沟道 SOT23-6L

  • 数据手册
  • 价格&库存
CJL8810 数据手册
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8810 Dual N-Channel MOSFET V(BR)DSS ID RDS(on)TYP SOT-23-6L 14.5 mΩ @4.5V 20V 15.6 mΩ@3.8V 7A 18.5 mΩ @2.5V 28 mΩ@1.8V   DESCRIPTION The CJL8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: L8810 XX L8810=Device code Solid point=Pin1 positioning point XX=Date Code MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 7 A Pulsed Drain Current IDM * 30 A Power Dissipation PD ③ 714 mW ③ 175 ℃/W Continuous Drain Current Thermal Resistance from Junction to Ambient RθJA Operation Junction and Storage Temperature Range TJ,Tstg -55~+150 ℃ TL 260 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) *Repetitive rating:Pluse width limited by junction temperature. www.jscj-elec.com 1 Rev. - 2.2 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 Я unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID = 250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA VGS =±10V, VDS = 0V ±5 µA 1 V Gate threshold voltage ① VGS(th) Drain-source on-resistance Forward tranconductance Diode forward voltage ① RDS(on) ① ① DYNAMIC PARAMETERS VDS =VGS, ID =250µA 20 V 0.4 VGS =10V, I D = 3A 10.5 13.5 20 mΩ VGS =4.5V, I D = 3A 11.5 14.5 22 mΩ VGS =3.8V, I D = 3A 12.6 15.6 24 mΩ VGS =2.5V, I D = 3A 14.5 18.5 26 mΩ VGS =1.8V, ID = 3A 20.5 28 35 mΩ gFS VDS =5V, ID =7A VSD IS=1A, VGS = 0V 9 S 1 V ② 1150 pF 185 pF Crss 145 pF Total gate charge Qg 15 nC Gate-source charge Qgs 0.8 nC Qgd 3.2 nC td(on) 6 ns VGS=5V,VDD=10V, 13 ns RL=1.35Ω,RGEN=3Ω 52 ns 16 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Gate-drain charge SWITCHING PARAMETERS Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =7A ② tr td(off) tf Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. 3. The value of PD&RθJA is measured with the device one sided actived, mounted on 1 in2 FR-4 board with 2oz. Copper, single sided, in a still air environment with Ta=25℃. www.jscj-elec.com 2 Rev. - 2.2 Typical Characteristics Output Characteristics 22 VDS=5V 1.8V 12 8 15 ID (A) 16 DRAIN CURRENT DRAIN CURRENT Pulsed 2.0V ID (A) 20 Transfer Characteristics 20 2.2V Pulsed 1.5V 10 Ta=100℃ 5 Ta=25℃ 4 VGS=1.2V 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 80 5 VDS 0 6 0 1 (V) 2 3 GATE TO SOURCE VOLTAGE ID RDS(ON) 80 —— VGS (V) VGS Ta=25℃ Ta=25℃ Pulsed (mΩ) ON-RESISTANCE ON-RESISTANCE 60 RDS(ON) 60 RDS(ON) (mΩ) Pulsed 40 VGS=2V 20 40 ID=3A 20 VGS=10V 0 0 4 8 12 DRAIN CURRENT ID 16 0 20 2 4 6 GATE TO SOURCE VOLTAGE Threshold Voltage 0.80 0 (A) 10 8 VGS 10 (V) IS —— VSD Ta=25℃ IS (A) 0.75 0.70 SOURCE CURRENT THRESHOLD VOLTAGE VTH (V) Pulsed ID=250uA 0.65 1 0.1 0.60 0.55 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 0.01 0.4 125 (℃ ) 0.6 0.8 SOURCE TO DRAIN VOLTAGE 3 1.0 1.2 VSD (V) Rev. - 2.2 Typical Characteristics NORMALIZED TRAISIENT THERMAL IMPENDANCE 10 2 NORMALIZED THERMAL IMPEDENCE, Zthja Mounted on 1 in FR-4 board with 2oz. Copper,single sided. In descending order D=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 0.01 D=TON/T RθJA=175℃/W TJ,PK=TA+PDM×Zthja×RθJA 1E-3 1E-4 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 SQUARE WAVE PULSE DURATION, tp (sec) MAXIMUM FORWARD BIASED SAFE OPERATING AREA 100 2 Mounted on 1 in FR-4 board with 2oz. Copper,single sided. IDM 10 d ite m Li 10us DRAIN CURRENT ID (A) n So RD 100us 1 1ms 10ms 0.1 100ms 1s RθJA=175℃/W DC TA=25℃ Single pulse 0.01 0.01 0.1 1 DRAIN TO SOURCE VOLTAGE www.jscj-elec.com 10 VDS BVdss 100 (V) 4 Rev. - 2.2 SOT-23-6L Package Outline Dimensions Symbol A A1 A2 b c D E1 E e e1 L θ Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° SOT-23-6L Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 2.2 SOT-23-6L Tape and Reel www.jscj-elec.com 6 Rev. - 2.2
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