CJMPD11

CJMPD11 Dual P-Channel Power MOSFET V(BR)DSS ID RDS(on)MAX 110mΩ@-4.5 V  -20V -2.3 A 140mΩ@-2.5 V  General Description The CJMPD11 uses advanced trench technology and design to Provide excellent RDS(on) with low gate charge. This device is suitable for use in DC-DC conversion applications. 11 Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current (t=300µs) IDM -10 A Power Dissipation PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ Thermal Resistance from Junction to Ambient www.jscj-elec.com 1 Rev. - 1.0 Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-16V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±8V, VDS = 0V ±100 nA -0.7 -1 V VGS =-4.5V, ID =-3A 70 110 VGS =-2.5V, ID =-2A 110 140 Gate threshold voltage VGS(th) Drain-source on-resistancea RDS(on) Forward tranconductancea gFS VDS =VGS, ID =-250µA VDS =-5V, ID =-2A -20 -0.4 V 5 mΩ S Dynamic characteristicsb 405 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.3 Turn-on delay time td(on) 11 Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) VDS =-10V,VGS =0V,f =1MHz 75 pF 55 f =1MHz 6 3.3 VDS =-10V,VGS =-2.5V,ID=-3A 12 0.7 VDD=-10V,VGEN=-4.5V,ID=-1A 35 RL=10Ω,RGEN=1Ω 30 tf Ω nC ns 10 Source-Drain Diode characteristics Diode forward current IS Diode pulsed forward currenta ISM Diode Forward voltage VDS TC=25℃ VGS =0V, IS=-1.3A -2.3 A -10 A -1.2 V Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0 Transfer Characteristics Output Characteristics -10 -12 VDS=-3V VGS=-3V,-4V,-4.5V Ta=25℃ Pulsed VGS=-2.5V Pulsed -10 Ta=25℃ DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) -8 -6 VGS=-2V -4 Ta=125℃ -8 -6 -4 -2 -2 0 VGS=-1.5V 0 0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE VDS (V) -0.5 -4 -1.5 -2.0 -2.5 -3.0 RDS(ON) - VGS 500 Pulsed Ta=25℃ VGS=-2.5V 400 ON-RESISTANCE RDS(ON) (m) ON-RESISTANCE RDS(ON) (m) Pulsed 100 VGS=-4.5V 50 ID=-2.6A 300 Ta=100℃ 200 100 0 0 -1 -2 -3 DRAIN CURRENT ID (A) -4 -5 IS - VSD -3 -3.5 GATE TO SOURCE VOLTAGE VGS (V) RDS(ON)  ID 150 -1.0 Ta=25℃ 0 -1 -2 -3 -4 GATE TO SOURCE VOLTAGE VGS (V) -5 Threshold Voltage -1.2 1 THRESHOLD VOLTAGE VTH (V) SOURCE CURRENT IS (A) Pulsed Ta=100℃ Ta=25℃ -1.0 -0.8 ID=-250uA -0.6 -0.4 -0.1 0.0 -0.2 -0.4 -0.8 -1.2 -1.6 SOURCE TO DRAIN VOLTAGE VSD (V) www.jscj-elec.com -2.0 25 50 75 100 125 JUNCTION TEMPERATURE T j (℃) 3 Rev. - 1.0 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 DFNWB2X2-6L Tape and Reel www.jscj-elec.com 5 Rev. - 1.0