CJQ4407S

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4407S P-Channel Power MOSFET ID RDS(on)MAX V(BR)DSS 15mΩ@-10V -30 V SOP8 -11A 20mΩ@-6V DESCRIPTION The CJQ4407S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications APPLICATIONS z Battery protection applications z Load switch MARKING Equivalent Circuit Q4407S= Device code . Q4407S YY 8 D 7 D 6 D 5 D Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none, the normal device YY=Date Code 1 2 S 3 S 4 S G Front side MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -11 A Pulsed Drain Current IDM -42 A 107 mJ PD 1.4 W RθJA 89 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ Single Pulsed Avalanche Energy EAS Power Dissipation Thermal Resistance from Junction to Ambient (1) (1).EAS condition: VDD=-20V,L=0.5mH, RG=25Ω, Starting TJ = 25°C www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA -30 V Zero gate voltage drain current IDSS VDS =-24V, VGS =0V -1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =-250µA -1.4 -2.2 V Static drain-source on-sate resistance RDS(on) VGS =-10V, ID = -10A 10 15 mΩ VGS =-6V, ID = -8A 13 20 mΩ On characteristics (note1) Forward transconductance gFS VDS =-5V, ID =-10A -1.0 20 S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS =-15V,VGS =0V, f =1MHz 2885 pF 341 305 Switching characteristics (note 2) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) VDS=-15V, VGS=-10V, ID=-10A 48 nC 12 14 16 VDD=-15V, VGS=-10V,RG=3Ω, RL=1.25Ω 12 ns 45 21 tf Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD VGS =0V, IS=-2A -1.2 V IS -11 A ISM -40 A Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Output Characteristics Transfer Characteristics -12 -12 Ta=25℃ VDS=-3V Pulsed -10 VGS=-3V,-4V,-6V,-8V (A) VGS=-2.5V ID -8 DRAIN CURRENT DRAIN CURRENT ID (A) -10 -6 -4 VGS=-2.2V -2 0 -1 Pulsed -2 -3 DRAIN TO SOURCE VOLTAGE Ta=100℃ Ta=25℃ -6 -4 -2 -4 VDS -8 -0 -5 -0 -1 (V) -2 -3 -4 GATE TO SOURCE VOLTAGE VGS RDS(ON) —— VGS RDS(ON) —— ID 16 50 Ta=25℃ Pulsed ID=-10A Pulsed (m) VGS=-6V 12 ON-RESISTANCE ON-RESISTANCE RDS(ON) 14 RDS(ON) (m) 40 10 VGS=-10V 8 -5 (V) 0 -2 -4 -6 DRAIN CURRENT ID -8 30 Ta=100℃ 20 0 -10 Ta=25℃ 10 -2 (A) -3 -4 -5 -6 -7 -8 GATE TO SOURCE VOLTAGE VGS -9 -10 (V) Threshold Voltage IS —— VSD -2.0 -10 Pulsed VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) -1.8 -1 Ta=100℃ Ta=25℃ -1.6 ID=-250uA -1.4 -1.2 -1.0 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -1.2 -1.4 -0.8 25 -1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 ( ℃) Rev. - 1.0 SOP8 Package Outline Dimensions Symbol A A1 A2 b c D e E E1 L θ Dimensions In Millimeters Min 1.350 Max 1.750 Dimensions In Inches Min 0.053 Max 0.069 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.800 5.000 1.270（BSC） 0.004 0.010 0.053 0.061 0.013 0.020 0.007 0.010 0.189 0.197 0.050（BSC） 5.800 3.800 0.400 6.200 4.000 1.270 0.228 0.150 0.016 0.244 0.157 0.050 0° 8° 0° 8° SOP8 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0