CJQ4438

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4438 N-Channel MOSFET V(BR)DSS SOP8 ID RDS(on)MAX 22mΩ@10V 60 V 8.2A 36mΩ@4.5V   FEATURE z TrenchFET Power MOSFET z Low R DS(on) APPLICATION z Load Switch PWM applications z z Low Gate Charge Equivalent Circuit MARKING Q4438 = Device code Q4438 YY Q4438 YY Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none, the normal device YY=Date Code Front side Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (note 1) ID 8.2 A Pulsed Drain Current (note 2) IDM 40 A Power Dissipation PD 1.25 W RθJA 100 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (note 1) www.cj-elec.com 1 I,May,2015 026)(7(/(&75,&$/&+$5$&7(5,67,&6 Ta =25 Я unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =60V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V Gate threshold voltage VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance (note 3) RDS(on) 60 V 1 µA ±100 nA 3 V VGS =10V, ID =8.2A 22 mΩ VGS =4.5V, ID =7.6A 36 mΩ Forward tranconductance (note 3) gfs VDS =5V, ID =8.2A Diode forward voltage (note 3) VSD IS=1A, VGS = 0V 1 10 S 1 V 2300 pF DYNAMIC PARAMETERS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 155 pF Crss 116 pF td(on) 8.2 ns VDS =30V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time tr VGS=10V,VDS=30V 5.5 ns td(off) RL=3.6Ω,RGEN=3Ω 29.7 ns 5.2 ns Turn-off fall time tf Total Gate Charge (10V) Qg Total Gate Charge (4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =30V,VGS =10V,ID =8.2A 58 nC 30 nC 6 nC 14.4 nC Notes : 1. The value of RθJA is measured with the device mounted on 1 in2 FR4 board with 2oz. Copper, in a still air environment with Ta=25℃.The value in any given application depends on the user’s specific board design. The current rating is based on the t ≤10s thermal resistance rating. 2. Repetitive rating : Pulse width limited by junction temperature. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%. 4. These parameters have no way to verify. www.cj-elec.com 2 I,May,2015 7\SLFDO&KDUDFWHULVWLFV Transfer Characteristics Output Characteristics 20 20 Ta=25℃ Pulsed VGS=4V,4.5V,5V,5.5V VDS=5V Ta=25℃ Pulsed 15 3.5V 10 DRAIN CURRENT DRAIN CURRENT ID ID (A) (A) 15 5 10 5 VGS=3V 0 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE 4 VDS 5 0 2 4 GATE TO SOURCE VOLTAGE (V) RDS(ON) —— ID 6 VGS (V) RDS(ON) —— VGS 80 80 Ta=25℃ Pulsed RDS(ON) 40 ON-RESISTANCE ON-RESISTANCE 60 (m) 60 RDS(ON) (m) Ta=25℃ Pulsed VGS=4.5V 20 40 ID=8.2A 20 VGS=10V 0 0 2 4 6 DRAIN CURRENT ID 8 0 10 0 2 (A) 4 6 GATE TO SOURCE VOLTAGE 8 VGS 10 (V) IS —— VSD Threshold Voltage 1.8 1 IS (A) 1.7 SOURCE CURRENT THRESHOLD VOLTAGE VTH (V) Ta=25℃ Pulsed ID=250uA 1.6 1.5 25 50 75 JUNCTION TEMPERATURE www.cj-elec.com 100 TJ 0.1 0.01 1E-3 0.2 125 (℃ ) 0.4 0.6 SOURCE TO DRAIN VOLTAGE 3 0.8 1.0 VSD (V) I,May,2015 SOP8 Package Outline Dimensions Symbol A A1 A2 b c D e E E1 L θ Dimensions In Millimeters Min 1.350 Max 1.750 Dimensions In Inches Min 0.053 Max 0.069 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.800 5.000 1.270（BSC） 0.004 0.010 0.053 0.061 0.013 0.020 0.007 0.010 0.189 0.197 0.050（BSC） 5.800 3.800 0.400 6.200 4.000 1.270 0.228 0.150 0.016 0.244 0.157 0.050 0° 8° 0° 8° SOP8 Suggested Pad Layout www.cj-elec.com 4 I,May,201 5 SOP8 Tape and Reel Dimensions are in millimeter Reel Option D D1 D2 G H I W1 W2 13''Dia Ø330.00 100.00 13.00 R151.00 R56.00 R6.50 12.40 17.60 G.W.(kg) REEL 4,000 pcs www.cj-elec.com Reel Size Box 13 inch 8,000 pcs Box Size(mm) Carton Carton Size(mm) 360×360×65 64,000 pcs 565×380×390 5 I,May,2015