CJQ4606

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4606 N-and P-Channel Enhancement Mode Power MOSFET ID RDS(on)TYP V(BR)DSS 19mΩ@10V 30V SOP8 6.9A 28mΩ@4.5V  29mΩ@-10V -30 V -6.0A 47mΩ@-4.5V  DESCRIPTION Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device desigh, low on-resistance and cost -effectiveness. The SOP8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. MARKING: Equivalent Circuit D1 D1 7 6 1 2 3 8 Q4606 YY Q4606= Device code YY=Date Code Solid dot = Pin1 indicator Solid dot = Green molding compound device, if none,the normal device. G1 S1 D2 S2 D2 5 4 G2 Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Sy mbol N-Channel P-Channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±20 ±20 6.9 -6.0 5.5 -5 20 -20 Continuous Drain Current a Ta=25℃ Ta=70℃ Pulsed Drain Current b Power Dissipation Thermal Resistance from Junction to Ambient ID IDM Unit V A PD 1.4 W RθJA 89 ℃/W Operating Junction Temperature TJ 150 Storage Temperature TSTG -55 ~+150 ℃ Notes : a. These tests are performed with infinite heat sink. b.Pulse width by Max.junction temperature. www.jscj-elec.com 1 Rev. - 1.0 026)(7(/(&75,&$/&+$5$&7(5,67,&6 Ta =25 Я unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage Gate-threshold voltage V(BR)DSS VGS(th) Gate-body leakage IGSS Zero gate voltage drain current IDSS Drain-source on-resistancec gfs Diode forward voltagec VSD N-Ch 30 VGS=0, ID =-250µA P-Ch -30 VDS =VGS, ID =250µA N-Ch 1 1.5 3 VDS =VGS, ID =-250µA P-Ch -1 -1.7 -3 VDS =0V, VGS =±20V RDS(on) Forward transconductance VGS=0, ID =250µA V N-Ch ±100 P-Ch VDS =30V, VGS =0V N-Ch 1 VDS =-30V, VGS =0V P-Ch -1 VGS =10V, ID = 6A N-Ch 19 28 V = GS =-10V, ID -6A P-Ch 29 36 VGS =4.5V, ID = 4A N-Ch 28 42 VGS =-4.5V, ID = -4A P-Ch 47 55 VDS =10V, ID =6A N-Ch VDS =-10V, ID =-6A P-Ch = IS=1.7A,VGS 0V = IS=-1.7A,VGS 0V V 4 nA µA mΩ S N-Ch 1.2 P-Ch -1.2 V Dynamic Total gate chargec Qg Gate-source charged Qgs Gate-drain charged Qgd Turn-on delay timec td(on) Rise timed tr d Turn-off delay time Fall timed td(off) tf Input Capacitanced Ciss Output Capacitanced Coss Reverse Transfer Capacitanced Crss N-Ch 9.5 N-Channel P-Ch 9.5 VDS =15V,VGS =4.5V,ID =6A N-Ch 1.5 P-Channel P-Ch 2 VDS =-15V,VGS =-4.5V,ID =-6A N-Ch 3 P-Ch 3 N-Ch 3.3 N-Channel P-Ch 7 VDS=15V,RL=2.2Ω, N-Ch 4.8 VGS=10V,RG=3Ω P-Ch 3 P-Channel N-Ch 26 VDS=-15V,RL=2.7Ω, P-Ch 20 VGS=-10V,RG=3Ω N-Ch 4 P-Ch 12 N-Ch 633 N-Channel P-Ch 850 VDS =15V,VGS =0V,f =1MHz N-Ch 65 P-Channel P-Ch 101 VDS =-15V,VGS =0V,f =1MHz N-Ch 55 P-Ch 65 nC ns pF Notes : c. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. d. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics CJQ4606-N-Ch Output Characteristics Transfer Characteristics 20 10 VGS=10V Ta=25℃ Ta=25℃ VGS=3.0V 7.0V 5.0V 4.5V Pulsed Pulsed 8 VGS=2.5V 5 ID 10 6 DRAIN CURRENT DRAIN CURRENT ID (A) (A) 15 4 2 VGS=2.0V 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS 0 5 0 (V) 1 2 3 GATE TO SOURCE VOLTAGE VGS 4 (V) RDS(ON) —— VGS ID 40 80 Ta=25℃ Ta=25℃ ON-RESISTANCE VGS=4.5V 20 VGS=10V 10 0 5 10 DRAIN CURRENT IS 10 —— 15 ID 60 RDS(ON) 30 RDS(ON) ON-RESISTANCE Pulsed (m) (m) Pulsed 40 ID=6.0A 20 0 20 (A) 0 4 8 12 GATE TO SOURCE VOLTAGE 16 VGS 20 (V) VSD Ta=25℃ 1 SOURCE CURRENT IS (A) Pulsed 0.1 0.01 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.0 VSD 1.2 (V) 3 Rev. - 1.0 Typical Characteristics CJQ4606-P-Ch Output Characteristics -20 Ta=25℃ Transfer Characteristics -10 VGS=-10V、-7.0V、-5.0V、-4.5V Pulsed Pulsed -8 VGS=-3.0V -5 ID -10 -6 DRAIN CURRENT DRAIN CURRENT ID (A) (A) -15 Ta=25℃ -4 -2 VGS=-2.5V -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS -0 -5 -0 (V) -1 -2 -3 GATE TO SOURCE VOLTAGE VGS -4 (V) RDS(ON) —— VGS ID 60 80 Ta=25℃ Ta=25℃ Pulsed VGS=-4.5V Pulsed (m) VGS=-10V 30 20 10 -0 -5 -10 DRAIN CURRENT IS -10 60 RDS(ON) 40 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 50 —— -15 ID 40 0 -20 (A) ID=-6.0A 20 -0 -4 -8 -12 GATE TO SOURCE VOLTAGE -16 VGS -20 (V) VSD Ta=25℃ -1 SOURCE CURRENT IS (A) Pulsed -0.1 -0.01 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -1.0 VSD -1.2 (V) 4 Rev. - 1.0 SOP8 Package Outline Dimensions Symbol A A1 A2 b c D e E E1 L θ Dimensions In Millimeters Min 1.350 Max 1.750 Dimensions In Inches Min 0.053 Max 0.069 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.800 5.000 1.270（BSC） 0.004 0.010 0.053 0.061 0.013 0.020 0.007 0.010 0.189 0.197 0.050（BSC） 5.800 3.800 0.400 6.200 4.000 1.270 0.228 0.150 0.016 0.244 0.157 0.050 0° 8° 0° 8° SOP8 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.0 SOP8 Tape and Reel Dimensions are in millimeter Reel Option D D1 D2 G H I W1 W2 13''Dia Ø330.00 100.00 13.00 R151.00 R56.00 R6.50 12.40 17.60 G.W.(kg) REEL Reel Size Box Box Size(mm) Carton Carton Size(mm) 4,000 pcs 13 inch 8,000 pcs 360×360×65 64,000 pcs 565×380×390 www.jscj-elec.com 6 Rev. - 1.0