CJQ9435

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ9435 P-Channel Power MOSFET V(BR)DSS ID RDS(on)MAX SOP8 60 mΩ@-10V -30V 70 mΩ@-6V -5.1A  105 mΩ@-4.5V  DESCRIPTION The CJQ9435 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. APPLICATIONS z Battery Switch z Load Switch Equivalent Circuit MARKING: D 8 D 7 D 6 D 5 Q9435= Device code YY=Date Code Solid dot = Pin1 indicator Solid dot = Green molding compound device, if none,the normal device. 1 2 S 3 S 4 S G MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -5.1 A Pulsed Drain Current IDM -20 A 20 mJ PD 1.4 W RθJA 89 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ Single Pulsed Avalanche Energy Power Dissipation Thermal Resistance from Junction to Ambient EAS (1) (1).EAS condition: VDD=-50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C 1 IMar6         Ta =25 Я unless otherwise specified Parameter Test Condition Symbol Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA V Zero gate voltage drain current IDSS VDS =-24V, VGS =0V -1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA VGS(th) VDS =VGS, ID =-250µA -1.5 -2.0 V VGS =-10V, ID =-4.6A 50 60 mΩ VGS =-6V, ID =-4.1A 60 70 mΩ VGS =-4.5V, ID =-2A 65 105 mΩ -30 On characteristics (note1) Gate-threshold voltage Static drain-source on-sate resistance Forward transconductance RDS(on) gFS VDS =-15V, ID =-4.6A -1.0 5 S Switching characteristics (note 2) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time tr td(off) Turn-off fall time tf Gate Resistance Rg 40 VDS=-15V, VGS=-10V, ID=-4.6A nC 4 6.3 30 VDD=-15V,ID=-1A, 60 VGS=-10V,RG=6Ω, ns 120 RL=15Ω 100 f =1MHz, VDS=0V, VGS=0V, 5.8 Ω Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current Pulsed drain-source diode forward current -1.2 V IS -5.1 A ISM -20 A VSD VGS =0V, IS=-2.6A Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production testing.  2 IMar6 7\SLFDO&KDUDFWHULVWLFV Output Characteristics -20 Transfer Characteristics -5 VGS=-10、-5.0、-4.5、-4.0V Ta=25℃ Ta=25℃ Pulsed Pulsed VGS=-3.5V -4 -10 -5 ID VGS=-3.0V -3 DRAIN CURRENT DRAIN CURRENT ID (A) (A) -15 -2 -1 -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS -0 -5 -0 (V) -1 -2 GATE TO SOURCE VOLTAGE -3 VGS -4 (V) RDS(ON) —— VGS ID 100 180 Ta=25℃ Ta=25℃ Pulsed Pulsed 150 (mΩ) (mΩ) 80 RDS(ON) 60 ON-RESISTANCE ON-RESISTANCE RDS(ON) VGS=-4.5V VGS=-10V 40 20 -0 -2 -4 -6 DRAIN CURRENT IS —— ID -8 -10 (A) 120 90 ID=-4.1A 60 30 -2 -4 -6 GATE TO SOURCE VOLTAGE -8 VGS -10 (V) VSD -10 Ta=25℃ Pulsed -0.1 SOURCE CURRENT IS (A) -1 -0.01 -1E-3 -1E-4 -1E-5 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE -1.0 VSD -1.2 (V)  3 IMar6 SOP8 Package Outline Dimensions Symbol A A1 A2 b c D e E E1 L θ Dimensions In Millimeters Min 1.350 Max 1.750 Dimensions In Inches Min 0.053 Max 0.069 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.800 5.000 1.270（BSC） 0.004 0.010 0.053 0.061 0.013 0.020 0.007 0.010 0.189 0.197 0.050（BSC） 5.800 3.800 0.400 6.200 4.000 1.270 0.228 0.150 0.016 0.244 0.157 0.050 0° 8° 0° 8° SOP8 Suggested Pad Layout www.cj-elec.com 4 I,Mar,2016 SOP8 Tape and Reel Dimensions are in millimeter Reel Option D D1 D2 G H I W1 W2 13''Dia Ø330.00 100.00 13.00 R151.00 R56.00 R6.50 12.40 17.60 G.W.(kg) REEL 4,000 pcs www.cj-elec.com Reel Size Box 13 inch 8,000 pcs Box Size(mm) Carton Carton Size(mm) 360×360×65 64,000 pcs 565×380×390 5 I,Mar,2016