CJQ9926

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD   ! "# CJQ9926 Dual N-Channel MOSFET V(BR)DSS ID RDS(on)MAX 40mΩ@2.5V  20V SOP8 4.8A  30mΩ@ 4.5V   FEATURE z Advanced trench process technology z High density cell design for ultra low on-resistance z High power and current handing capability z Ideal for Liion battery pack applications MARKING Equivalent Circuit Q9926= Device code YY=Date Code Solid dot = Pin1 indicator Solid dot = Green molding compound device, if none,the normal device. Maximum ratings (Ta=25℃ unless otherwise noted) Symbol Value Unit Drain-Source voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current * ID 4.8 A Pulsed Drain Current IDM 30 A Power Dissipation * PD 1.25 W RθJA 100 ℃/ W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55~+150 ℃ Parameter Thermal Resistance from Junction to Ambient * * Surface Mounted on 1” x 1” FR4 Board. www.jscj-elec.com 1 Rev. - 1.0 026)(7(/(&75,&$/&+$5$&7(5,67,&6 Ta =25 Я unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =20V,VGS = 0V Gate-body leakage current IGSS VGS =±12V, VDS = 0V Gate threshold voltage (note 1) VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance (note 1) RDS(on) Forward transconductance (note 1) gFS 20 V 1 µA ±100 nA 1.0 1.2 V VGS =2.5V, ID =5A 28 40 mΩ VGS =4.5V, ID =6A 20 30 mΩ VDS =15V, ID =6A 0.6 15 S DYNAMIC CHARACTERISTICS (note 2) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V,VGS=0V, I=1.0MHz 640 pF 140 pF 80 pF SWITCHING CHARACTERISTICS (note 2) Turn-on delay time td(on) Turn-on rise time Turn-off delay time tr td(off) 35 ns VGEN=4.5V,VDD=15V, 60 ns RGEN=6Ω, ID =1A, RL=15Ω 75 ns Turn-off fall time tf 30 ns Total gate charge Qg 20 nC Gate-source Charge Qgs Gate-drain Charge Qgd VDS =15V,VGS =4.5V,ID =6A 3 nC 3.3 nC SOURCE-DRAIN DIODE CHARACTERISTICS Maximum diode forward current Diode forward voltage (note 1) Source-Drain Reverse Recovery Time IS VSD trr 1 A IS=1.7A,VGS=0V 1.2 V IF = 1.7 A, di/dt = 100 A/μs 80 ns Notes : 1. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%. 2. Guaranteed by design, not subject to production www.jscj-elec.com 2 Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV Output Characteristics 30 VGS=5.0V 4.5V 4.0V 3.5V (A) 8 ID 20 DRAIN CURRENT DRAIN CURRENT 2.0V 15 10 VGS=1.5V 5 0 o Ta=25 C 2.5V ID (A) 25 Transfer Characteristics 10 3.0V 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE VDS 4 2 0 10 0 1 2 GATE TO SOURCE VOLTAGE (V) RDS(ON) —— ID 80 6 RDS(ON) —— 100 3 VGS (V) VGS o o Ta=25 C Ta=25 C (mΩ) RDS(ON) VGS=2.5V 40 ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 80 60 VGS=4.5V 20 0 0 6 12 18 DRAIN CURRENT ID 24 60 ID=6A 40 20 0 30 0 2 4 6 GATE TO SOURCE VOLTAGE (A) 8 VGS 10 (V) IS —— VSD 20 o Ta=25 C SOURCE CURRENT IS (A) 10 3 1 0.3 0.1 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.2 1.4 VSD (V) 3 Rev. - 1.0 SOP8 Package Outline Dimensions Symbol A A1 A2 b c D e E E1 L θ Dimensions In Millimeters Min 1.350 Max 1.750 Dimensions In Inches Min 0.053 Max 0.069 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.800 5.000 1.270（BSC） 0.004 0.010 0.053 0.061 0.013 0.020 0.007 0.010 0.189 0.197 0.050（BSC） 5.800 3.800 0.400 6.200 4.000 1.270 0.228 0.150 0.016 0.244 0.157 0.050 0° 8° 0° 8° SOP8 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 SOP8 Tape and Reel Dimensions are in millimeter Reel Option D D1 D2 G H I W1 W2 13''Dia Ø330.00 100.00 13.00 R151.00 R56.00 R6.50 12.40 17.60 G.W.(kg) REEL 4,000 pcs www.jscj-elec.com Reel Size Box 13 inch 8,000 pcs Box Size(mm) Carton Carton Size(mm) 360×360×65 64,000 pcs 565×380×390 5 Rev. - 1.0