CJS2013

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS2013 Dual N-Channel MOSFET V(BR)DSS TSSOP8 ID RDS(on)TYP  10.5 mΩ@4.5V   11.4 mΩ@3.8V  20 V 6A  12.3 mΩ@3.1V  13.5 mΩ@2.5V FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management Equivalent Circuit MARKING Ｓ２０１３ LOT No. ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID 6 A Pulsed Drain Current (note 1) IDM 25 A Thermal Resistance from Junction to Ambient (note 2) RθJA 62.5 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ TL 260 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) www.jscj-elec.com 1 Rev. - 1.0 026)(7(/(&75,&$/&+$5$&7(5,67,&6 Ta =25 ℃ unless otherwise specified Parameter Test Condition Symbol Min Typ Max Unit STATIC CHARACTERICTISCS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =18V,VGS = 0V Gate-body leakage current IGSS VGS =±10V, VDS = 0V VGS(th) VDS =VGS, ID =250µA 0.5 VGS =4.5V, ID = 3A Gate threshold voltage (note 3) Drain-source on-resistance (note 3) RDS(on) 20 V 1 µA ±100 nA 0.7 1.0 V 9.0 10.5 13.5 mΩ VGS =3.8V, ID = 3A 9.5 11.4 14.0 mΩ VGS =3.1V, ID = 3A 10.5 12.3 15.0 mΩ VGS =2.5V, ID = 3A 12.0 13.5 16.5 mΩ Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 10 S 1.2 V DYNAMIC CHARACTERICTISCS (note4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =8V,VGS =0V,f =1MHz 935 pF 170 pF 145 pF 16 ns SWITCHING CHARACTERICTISCS (note 4) Turn-on delay time Turn-on rise time td(on) tr VDD=10V,VGS=4V, 8 ns td(off) ID=1A,RGEN=10Ω 48 ns tf 14 ns Total Gate Charge Qg 16 nC Gate-Source Charge Qgs 1.3 nC Gate-Drain Charge Qgd 1.8 nC Turn-off delay time Turn-off fall time VDS =10V,VGS =4.5V,ID=4A Notes : 1.Repetitive rating：Pluse width limited by maximum junction temperature 2.Surface mounted on FR4 board using 1 square inch pad size,1oz single-side copper. 3. Pulse test : Pulse width≤300μs, duty cycle≤2%. 4. Guaranteed by design, not subject to production. www.jscj-elec.com 2 Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV Output Characteristics Transfer Characteristics 12 20 Ta=25℃ VGS=2.5V,3V,4V,5V Pulsed VDS=3V 10 (A) 16 ID (A) VGS=2V 12 DRAIN CURRENT ID DRAIN CURRENT Pulsed 8 Ta=25℃ 8 Ta=100℃ 6 4 VGS=1.5V 4 0 2 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 0.0 5 (V) 0.5 1.0 1.5 GATE TO SOURCE VOLTAGE 2.0 VGS RDS(ON) —— VGS RDS(ON) —— ID 20 300 Pulsed Ta=25℃ Pulsed RDS(ON) (m) 250 (m) 15 ON-RESISTANCE RDS(ON) ON-RESISTANCE 2.5 (V) VGS=2.5V VGS=3.8V VGS =4.5V 10 ID=3A 200 150 Ta=100℃ 100 50 Ta=25℃ 1 2 3 4 DRAIN CURRENT 5 ID 6 0 7 0 (A) 1 2 3 GATE TO SOURCE VOLTAGE 4 VGS 5 (V) Threshold Voltage IS —— VSD 8 1.2 Pulsed VTH 1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1.0 Ta=25℃ 0.1 0.8 ID=250uA 0.6 0.4 0.2 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.2 VSD (V) 1.4 1.6 0.0 25 50 75 JUNCTION TEMPERATURE 100 Tj 125 (℃ ) 3 Rev. - 1.0    6\PERO ' 'LPHQVLRQV,Q0LOOLPHWHUV 'LPHQVLRQV,Q,QFKHV Min Max Min Max     (     E     F     (    $    $     $     H / + © ˄%6&˅   7