JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TSSOP8 Plastic-Encapsulate MOSFETS
CJS2019
Dual N-Channel MOSFET
V(BR)DSS
TSSOP8
ID
RDS(on)TYP
19.5 mΩ@4.5V
20 V
5A
24 mΩ@2.5V
FEATURE
z TrenchFET Power MOSFET
z Excellent RDS(on)
z Low Gate Charge
z High Power and Current Handing Capability
z Surface Mount Package
APPLICATION
z Battery Protection
z Load Switch
z Power Management
Equivalent Circuit
MARKING
S2019
LOT No.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±10
V
Continuous Drain Current (TA=25℃)
ID
5
A
Pulsed Drain Current (note 1)
IDM
25
A
Thermal Resistance from Junction to Ambient (note 2)
RθJA
62.5
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
TL
260
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
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Rev. - 1.0
026)(7(/(&75,&$/&+$5$&7(5,67,&6
Ta =25 ℃ unless otherwise specified
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERICTISCS
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =18V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±10V, VDS = 0V
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =250µA
Drain-source on-resistance (note 3)
RDS(on)
20
V
1
µA
±100
nA
0.7
1.2
V
VGS =4.5V, ID = 3A
19.5
27
mΩ
VGS =2.5V, ID = 3A
24
35
mΩ
10
Forward tranconductance (note 3)
gFS
VDS =5V, ID =4.5A
Diode forward voltage (note 3)
VSD
IS=1.25A, VGS = 0V
0.45
S
1.2
V
DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS =8V,VGS =0V,f =1MHz
800
pF
155
pF
125
pF
18
ns
SWITCHING CHARACTERICTISCS (note 4)
Turn-on delay time
Turn-on rise time
td(on)
tr
VDD=10V,VGS=4V,
5
ns
td(off)
ID=1A,RGEN=10Ω
43
ns
tf
20
ns
Total Gate Charge
Qg
11
nC
Gate-Source Charge
Qgs
2.3
nC
Gate-Drain Charge
Qgd
2.5
nC
Turn-off delay time
Turn-off fall time
VDS =10V,VGS =4.5V,ID=4A
Notes :
1.Repetitive rating:Pluse width limited by maximum junction temperature
2.Surface mounted on FR4 board using 1 square inch pad size,1oz single-side copper.
3. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.
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Rev. - 1.0
7\SLFDO&KDUDFWHULVWLFV
Output Characteristics
Ta=25℃
VGS=2.5V,3V,4V,5V
Pulsed
VDS=3V
(A)
ID
(A)
VGS=2V
12
DRAIN CURRENT
ID
Pulsed
5
16
DRAIN CURRENT
Transfer Characteristics
6
20
8
Ta=25℃
4
Ta=100℃
3
2
VGS=1.5V
4
0
1
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
(V)
0.5
1.0
1.5
GATE TO SOURCE VOLTAGE
2.0
VGS
2.5
(V)
RDS(ON) —— VGS
RDS(ON) —— ID
Ta=25℃
30
VDS
0
0.0
5
300
Pulsed
VGS=2.5V
Pulsed
(m)
RDS(ON)
VGS=4.5V
20
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(m)
250
10
ID=3A
200
150
Ta=100℃
100
50
Ta=25℃
1
2
3
4
DRAIN CURRENT
5
ID
6
0
7
0
(A)
1
2
3
GATE TO SOURCE VOLTAGE
4
VGS
5
(V)
Threshold Voltage
IS —— VSD
8
1.2
Pulsed
VTH
1
Ta=100℃
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
1.0
Ta=25℃
0.1
0.8
ID=250uA
0.6
0.4
0.2
0.01
0.0
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
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1.2
1.4
0.0
25
1.6
VSD (V)
50
75
JUNCTION TEMPERATURE
3
100
Tj
125
(℃ )
Rev. - 1.0
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