CJS8820

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8820 Dual N-Channel MOSFET TSSOP8 V(BR)DSS ID RDS(on)TYP 14mΩ@10 V 16mΩ @4.5V 20V 7A 18 mΩ@3.8V 22mΩ @2.5V DESCRIPTION The CJS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: Ｓ８８２０ LOT No. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 7 A Pulsed Drain Current IDM * 30 A Thermal Resistance from Junction to Ambient RθJA 125 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ Continuous Drain Current *Repetitive rating：Pluse width limited by junction temperature www.jscj-elec.com 1 Rev. - 1.1 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 Я unless otherwise specified Parameter Test Condition Symbol Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID = 250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V Gate-body leakage current IGSS VGS =±10V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage (note 1) Drain-source on-resistance (note 1) RDS(on) 20 V 0.5 1 µA ±10 µA 1.1 V VGS =10V, ID = 7A 8 14 21 mΩ VGS =4.5V, ID =6.6A 10 16 24 mΩ VGS =3.8V, ID = 6A 12 18 28 mΩ VGS =2.5V, ID =5.5A 16 22 32 mΩ 9 Forward tranconductance (note 1) gFS VDS =5V, ID =7A Diode forward voltage(note 1) VSD IS=1A, VGS = 0V S 1 V DYNAMIC PARAMETERS (note 2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 650 pF 140 pF Crss 60 pF Total gate charge Qg 8 nC Gate-source charge Qgs 2.5 nC Gate-drain charge Qgd 3 nC td(on) 0.5 ns VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =6A SWITCHING PARAMETERS(note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr VGS=5V,VDD=10V, 1 ns td(off) RL=1.5Ω,RGEN=3Ω 12 ns 4 ns tf Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.1 7\SLFDO&KDUDFWHULVWLFV Output Characteristics 20 Transfer Characteristics 20 Pulsed 2.6V 2.4V VDS=5V 2.2V Pulsed (A) 15 ID 2.0V 12 DRAIN CURRENT DRAIN CURRENT ID (A) 16 1.8V 8 Ta=100℃ 5 1.5V 4 10 Ta=25℃ VGS=1.2V 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 80 5 VDS 0 6 0 1 (V) 2 3 GATE TO SOURCE VOLTAGE ID RDS(ON) 80 —— VGS (V) VGS Ta=25℃ Ta=25℃ Pulsed (mΩ) 40 ON-RESISTANCE ON-RESISTANCE 60 RDS(ON) 60 RDS(ON) (mΩ) Pulsed VGS=2.5V 20 40 ID=3A 20 VGS=10V 0 0 4 8 12 DRAIN CURRENT ID 16 0 20 2 4 6 GATE TO SOURCE VOLTAGE Threshold Voltage 0.80 0 (A) 10 8 VGS 10 (V) IS —— VSD Ta=25℃ IS (A) 0.75 0.70 SOURCE CURRENT THRESHOLD VOLTAGE VTH (V) Pulsed ID=250uA 0.65 1 0.1 0.60 0.55 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 0.01 0.4 125 (℃ ) 0.6 0.8 SOURCE TO DRAIN VOLTAGE 3 1.0 1.2 VSD (V) Rev. - 1.1    6\PERO ' 'LPHQVLRQV,Q0LOOLPHWHUV 'LPHQVLRQV,Q,QFKHV Min Max Min Max     (     E     F     (    $    $     $     H / + © ˄%6&˅   7