CJS9004

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS9004 TSSOP8 Dual N-Channel MOSFET V(BR)DSS ID RDS(on)TYP 7.5mΩ@4.5V 8.0mΩ @4.0V 20V 10A  8.4 mΩ@ 3.8V 8.9 mΩ@3.1V 9.7 mΩ@2.5V DESCRIPTION The CJS9004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: D1/D2 S2 S2 G2 8 7 6 5 1 2 3 4 D1/D2 S1 S1 G1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 10 A Pulsed Drain Current IDM * 50 A Thermal Resistance from Junction to Ambient RθJA 62.5 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ Continuous Drain Current www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID = 250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA VGS =±8V, VDS = 0V ±10 µA Gate threshold voltage (note 1) Drain-source on-resistance (note 1) VGS(th) RDS(on) 20 V VDS =VGS, ID =250µA 0.5 0.7 0.9 V VGS =4.5V, ID =3A 6.0 7.5 9.0 mΩ VGS =4.0V, ID =3A 7.0 8.0 9.5 mΩ VGS =3.8V, ID = 3A 7.5 8.4 9.8 mΩ VGS =3.1V, ID =3A 8.0 8.9 10 mΩ VGS =2.5V, ID = 3A 9.0 9.7 12 mΩ 8 23 Forward tranconductance (note 1) gFS VDS =5V, ID =7A Diode forward voltage(note 1) VSD IS=1A, VGS = 0V 0.7 S 1 V DYNAMIC PARAMETERS (note 2) 1040 pF 225 pF Crss 195 pF Total gate charge Qg 13 nC Gate-source charge Qgs 2.8 nC Gate-drain charge Qgd 5.6 nC td(on) 28 ns VGS=5V,VDD=10V, 64 ns RL=1.35Ω,RGEN=3Ω 90 ns 58 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =7A SWITCHING PARAMETERS(note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Drain-Source Diode Characteristics Diode Forward Current IS - - 6.0 A Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV Output Characteristics 25 Transfer Characteristics 10 Pulsed VDS=16V VGS=10V、3.0V、2V Pulsed 20 ID 15 DRAIN CURRENT DRAIN CURRENT ID (A) (A) 8 VGS=1.5V 10 5 6 4 Ta=100℃ Ta=25℃ 2 VGS=1.2V 0 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE VDS 0 0.0 10 0.4 0.6 0.8 1.2 1.0 GATE TO SOURCE VOLTAGE ID RDS(ON) —— 0.2 (V) 1.4 VGS RDS(ON)—— VGS 100 Ta=25℃ Ta=25℃ (mΩ) RDS(ON) 14 12 VGS=2.5V 10 ON-RESISTANCE RDS(ON) ON-RESISTANCE Pulsed ID=8A Pulsed (mΩ) 16 1.6 (V) VGS=3.8V 8 VGS=4.5V 6 80 60 40 Ta=100℃ 20 4 Ta=25℃ 2 1 2 3 4 5 6 DRAIN CURRENT IS —— ID 7 0 8 4 VSD 8 10 VGS 12 (V) 700 Pulsed VTH (mV) 1 Ta=100℃ THRESHOLD VOLTAGE 0.1 6 Threshold Voltage 750 Ta=25℃ IS (A) 2 GATE TO SOURCE VOLTAGE (A) 10 SOURCE CURRENT 0 Ta=25℃ 0.01 1E-3 650 600 ID=250uA 550 500 450 400 1E-4 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.0 350 25 1.2 50 75 JUNCTION TEMPERATURE VSD (V) 3 100 TJ 125 (℃ ) Rev. - 1.0 7\SLFDO&KDUDFWHULVWLFV TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3 Maximum Safe Operating Area 2.5 I D , Drain Current(A) PT - Total Power Dissipation - W 100 2 Mounted on FR-4 board of 1 inch2 , 2oz 1.5 1 0.5 10 0 25 50 75 100 Ambient Temperature www.jscj-elec.com 125 TA 150 0.03 0.1 175 (℃ ) (O N it 10 VGS=4.5V Single Pulse TA=25 C 1 Drain-SourceVoltage 4 us 100 us 1m s 10 ms 10 D C 0 ms 1 0.1 0 R DS im )L 10 20 V DS (V) Rev. - 1.0  6\PERO ' 'LPHQVLRQV,Q0LOOLPHWHUV 'LPHQVLRQV,Q,QFKHV Min Max Min Max     (     E     F     (    $    $     $     H / + © ˄%6&˅     7