CJT04N15

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate MOSFETS CJT04N15 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID 150V  160mΩ@10V 4A SOT-223   GENERAL DESCRIPTION This CJT04N15 use advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications. 1 1. GATE 2. DRAIN 3. SOURCE 2 3 FEATURE High density cell design for ultra low RDS(ON) z z Fully characterized avalanche voltage and current z Excellent package for good heat dissipation MARKING T04N15 151 EQUIVALENT CIRCUIT T04N15= Device code 151=Code Maximum ratings (Ta=25℃ unless otherwise noted) Symbol Value Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 4 Pulsed Drain Current(note1) IDM 16 RθJA 125 TJ 150 Parameter Thermal Resistance from Junction to Ambient Junction Temperature TSTG Storage Temperature Range Maximum lead temperure for soldering purposes , TL 1/8”from case for 5 seconds www.cj-elec.com 1 Unit V A ℃/W -55 ~+150 260 ℃ A-2,May,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Test Condition Symbol Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 150 V Drain-source diode forward voltage(note2) VSD VGS = 0V, IS =2.0A 1.2 Zero gate voltage drain current IDSS VDS =150V, VGS =0V 1 µA Gate-body leakage current (note2) IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 2.0 2.5 V Static drain-source on-resistance RDS(on) VGS =10V, ID =4.0A 130 160 mΩ On characteristics (note2) Forward transconductance gfs VDS =15V, ID =4A 1.5 5 S Dynamic characteristics (note 3) 900 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 70 Total gate charge Qg 19 Gate-source charge Qgs Gate-drain charge Qgd 7 Turn-on delay time (note3) td(on) 8 VDS =25V,VGS =0V,f =1MHz 115 pF Switching characteristics (note 3) Turn-on rise time (note3) Turn-off delay time (note3) Turn-off fall time (note3) tr td(off) VDS =75V,VGS =10V,ID =1.5A 5.5 VDS=75V, VGS=10V, 10 RG=6Ω, ID =1.0A,RL=75Ω 20 nC ns 15 tf Notes : 1. Repetitive Rating:Pulse width limited by maximum junction temperature. 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. www.cj-elec.com 2 A-2,May,2016 Typical Characteristics Output Characteristics Transfer Characteristics 20 20 Ta=25℃ VDS=10V VGS=4V,5V,6V Pulsed Pulsed 16 16 8 VGS=3.2V 4 VGS=3V DRAIN CURRENT ID 12 DRAIN CURRENT ID (A) (A) VGS=3.5V 12 Ta=100℃ 8 Ta=25℃ 4 0 0 0 5 10 15 DRAIN TO SOURCE VOLTAGE VDS 20 0 (V) 2 4 GATE TO SOURCE VOLTAGE 6 VGS (V) RDS(ON) —— VGS RDS(ON) —— ID 300 500 Ta=25℃ Pulsed Pulsed ID=4A 250 (m) RDS(ON) 200 VGS=10V 150 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 400 100 300 Ta=100℃ 200 100 Ta=25℃ 50 0 0 1 2 3 4 DRAIN CURRENT ID 5 6 2 (A) 4 6 8 GATE TO SOURCE VOLTAGE VGS 10 (V) Threshold Voltage IS —— VSD 5 3.0 Pulsed 2.5 VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1 0.1 Ta=25℃ Ta=100℃ 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1.0 1.2 1.5 1.0 0.5 25 1.4 VSD (V) ID=250uA 2.0 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 ( ℃) A-2,May,2016 SOT-223 Package Outline Dimensions Symbol A A1 A2 b b1 c D E E1 e L θ Dimensions In Millimeters Min. Max. —— 1.800 0.020 0.100 1.500 1.700 0.660 0.840 2.900 3.100 0.230 0.350 6.300 6.700 6.700 7.300 3.300 3.700 2.300(BSC) 0.750 —— 0° 10° Dimensions In Inches Max. Min. —— 0.071 0.001 0.004 0.059 0.067 0.026 0.033 0.114 0.122 0.009 0.014 0.248 0.264 0.264 0.287 0.130 0.146 0.091(BSC) 0.030 —— 0° 10° SOT-223 Suggested Pad Layout www.cj-elec.com 4 A-2,May,2016 SOT-223 Tape and Reel www.cj-elec.com 5 A-2,May,2016