CJU30P10A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU30P10A P-Channel Power MOSFET ID RDS(on)TYP V(BR)DSS 48mΩ@-10V -100V TO-252-2L -30A 52mΩ@-4.5V GENERAL DESCRIPTION The CJU30P10A uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. FEATURE  Advanced trench process technology  Reliable and rugged  High density cell design for ultra low On-Resistance 2 1 3 APPLICATION  Power management in notebook computer  Portable equipment and battery powered systems EQUIVALENT CIRCUIT MARKING U30P10A XXXX 1. GATE 2. DRAIN 3. SOURCE U30P10A = Device code. Solid dot = Green molding compound device. if none, the normal device. XXXX = Code. MAXIMUM RATINGS ( TA=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 V ① Continuous Drain Current ID -30 A Pulsed Drain Current IDM② -120 A Single Pulsed Avalanche Energy EAS③ 205 mJ Power Dissipation PD ① 89 W Thermal Resistance from Junction to Case RθJC ① 1.4 ℃/W Junction Temperature and Storage Temperature Range TJ ,Tstg -55 ~+150 ℃ www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS TA=25 ℃ unless otherwise specified Parameter Test Condition Symbol Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA V VDS =-80V, TJ =25℃ -1.0 VGS =0V TJ =125℃ -100 Zero gate voltage drain current IDSS Gate-body leakage current IGSS VDS =0V, VGS =±20V VGS(th) VDS =VGS, ID =-250µA RDS(on) RDS(on) On characteristics -100 µA ±100 nA -2.0 -2.5 V VGS =-10V, ID = -15A 48 55 mΩ VGS =-4.5V, ID = -15A 52 65 mΩ ④ Gate-threshold voltage Static drain-source on-sate resistance -1.5 ④⑤ Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg VDS =-20V,VGS =0V, f =1MHz f =1MHz 3765 pF 250 136 Ω 12 Drain-Source Diode Characteristics Drain-source diode forward voltage ④ VSD Continuous drain-source diode forward current Pulsed drain-source diode forward current IS VGS = 0V, IS=-10A ① ② ISM -1.2 V -30 A -120 A Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=-50V,VGS=-10V, L=0.5mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Transfer Characteristics Output Characteristics -30 -30 TJ=25℃ VGS= -10V,-8V,-4V,-3.5V Pulsed ID -20 DRAIN CURRENT ID DRAIN CURRENT (A) -25 (A) -25 VDS=-10V Pulsed VGS= -3.2V -15 -10 -20 TJ=25℃ -15 -10 VGS= -3V -5 -5 0 0 -2 -4 -6 -8 DRAIN TO SOURCE VOLTAGE VDS 0 -10 0 (V) -2 -4 GATE TO SOURCE VOLTAGE VGS -6 (V) RDS(ON)—— VGS RDS(ON) —— ID 70 120 TJ=25℃ ID=-15A Pulsed (m) VGS= -4.5V 50 ON-RESISTANCE ON-RESISTANCE RDS(ON) 60 RDS(ON) (m) Pulsed VGS= -10V 40 30 -1 -5 -10 -15 DRAIN CURRENT -20 ID -25 90 TJ=125℃ 60 TJ=25℃ 30 -30 -2 -4 -6 IS —— VSD -10 VGS -12 (V) Threshold Voltage -30 -4 Pulsed Pulsed -3 TJ=125℃ THRESHOLD VOLTAGE VTH IS (A) (V) -10 SOURCE CURRENT -8 GATE TO SOURCE VOLTAGE (A) TJ=25℃ -1 -0.1 -1 -0.2 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -2 -1 0 25 -2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 Typical Characteristics Maximum Forward Biased Safe Operating Area Capacitances 10000 -300 f=1MHz Pulsed IDM -100 C (pF) Ciss DRAIN CURRENT CAPACITANCE ID (A) 1000 Coss Crss 100 n So RD -10 1us d ite Lim 10us 100us 1ms 10ms -1 DC RθJC=1.4℃/W BVdss TC=25℃ 10 -0.01 -0.1 -10 -1 DRAIN TO SOURCEVOLTAGE -0.1 -0.1 -100 Single pulse VDS (V) -1 -10 DRAIN TO SOURCE VOLTAGE -300 -100 VDS (V) Normalized Traisient Thermal Impendance 10 In descending order D=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse NORMALIZED THERMAL IMPEDENCE, Zthjc 1 0.1 D=TON/T RθJC=1.4℃/W TJ,PK=TC+PDM×Zthjc×RθJC 0.01 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 SQUARE WAVE PULSE DURATION, tp (sec) www.jscj-elec.com 4 Rev. - 1.0 TO-252-2L Package Outline Dimensions D A D1 c V L3 h E φ L4 L A1 L2 L1 D2 b e θ Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 Φ θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 1.100 1.300 0° 8° 0.000 0.300 5.250 REF. Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0.043 0.051 0° 8° 0.000 0.012 0.207 REF. TO-252-2L Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.0 TO-252-2L Tape and Reel www.jscj-elec.com 6 Rev. - 1.0