CJX3134K

JIANGSU CHANGJING CHANGJIANGELECTRONICS ELECTRONICSTECHNOLOGY TECHNOLOGYCO., CO.,LTD LTD SOT-563 Plastic-Encapsulate MOSFETS CJX3134K Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX ID SOT-563 380mΩ@ 4.5V 450mΩ@ 2.5V  20 V 0.75A 800mΩ@1.8V FEATURE  Surface Mount Package  N-Channel Switch with Low RDS(on)  Operated at Low Logic Level Gate Drive  Equivalent to Two CJ3134K. MARKING APPLICATION  Load/Power Switching  Interfacing Switching  Battery Management for Ultra Small Portable Electronics  Logic Level Shift Equivalent Circuit D1 6 G2 5 S2 4 1 S1 2 G1 3 D2 ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-source voltage VDS 20 V Typical Gate-source voltage VGS ±12 V Continuous drain current (t ≤10s) ID 0.75 A Power dissipation(note1) PD 0.15 W RθJA 833 ℃/W Junction temperature TJ 150 ℃ Storage temperature Tstg -55~ +150 ℃ Thermal resistance from junction to ambient www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =20V,VGS = 0V Gate-body leakage current IGSS VGS =±10V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage (note 2) Drain-source on-resistance (note 2) RDS(on) 20 V 1 µA ±20 µA 0.54 1.1 V VGS =4.5V, ID =0.65A 270 380 mΩ VGS =2.5V, ID =0.55A 320 450 mΩ VGS =1.8V, ID =0.45A 390 800 mΩ 1.6 Forward tranconductance (note 2) gFS VDS =10V, ID =0.8A Diode forward voltage(note 2) VSD IS=0.15A, VGS = 0V 0.35 S 1.2 V 79 120 pF 13 20 pF 15 pF DYNAMIC PARAMETERS (note 3) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 9 td(on) 6.7 ns VDS =16V,VGS =0V,f =1MHz SWITCHING PARAMETERS(note 3) Turn-on delay time Turn-on rise time tr VGS=4.5V,VDS=10V, 4.8 ns td(off) ID=0.5A,RGEN=10Ω 17.3 ns tf 7.4 ns Total Gate Charge Qg 20 nC Gate-Source Charge Qgs 1 nC Gate-Drain Charge Qgd 4 nC Turn-off delay time Turn-off fall time VDS =10V,VGS =4.5V,ID =7A Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 3. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Output Characteristics Transfer Characteristics 5.0 4.5 4.0 VGS=4V,5V Ta=25℃ VDS=3V VGS=3V 3.5 VGS=2.5V 3.0 Pulsed Pulsed (A) ID 3.5 3.0 DRAIN CURRENT DRAIN CURRENT ID (A) 4.0 VGS=2V 2.5 2.0 1.5 Ta=100℃ 2.0 1.5 0.5 0.5 0.0 0.0 Ta=25℃ 1.0 VGS=1.5V 1.0 2.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE 4.0 VDS 4.5 0.0 5.0 0 (V) 1 2 GATE TO SOURCE VOLTAGE 3 VGS 4 (V) RDS(ON) —— VGS RDS(ON) —— ID 500 800 Pulsed Ta=25℃ 700 350 (m) 400 VGS=2.5V 300 VGS=4.5V 500 250 200 0.1 ID=0.65A 600 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) VGS=1.8V RDS(ON) 450 Pulsed Ta=100℃ 400 300 Ta=25℃ 200 0.2 0.3 0.4 0.5 0.6 0.7 DRAIN CURRENT 0.8 ID 0.9 1.0 1.1 100 1.2 1 (A) 2 3 GATE TO SOURCE VOLTAGE 4 VGS 5 (V) Threshold Voltage IS —— VSD 2 0.8 Pulsed 1 VTH 0.1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 0.7 Ta=25℃ 0.6 ID=250uA 0.5 0.4 0.3 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.2 1.4 0.2 25 1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 (℃ ) Rev. - 1.0 SOT-563 Package Outline Dimensions SOT-563 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 SOT-563 Tape and Reel www.jscj-elec.com 5 Rev. - 1.0