JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3LK Plastic-Encapsulate Thyristors
CT401L
4Q TRIACs
MAIN CHARACTERISTICS
IT(RMS)
1A
VDRM/VRRM
CT401L-600T/S
600V
CT401L-800T/S
800V
1.55V
VTM
SOT-23-3LK
1.CATHODE
2.ANODE
3.GATE
FEATURES
NPNPN 5-layer Structure TRIACs
Mesa Glass Passivated Technology
Multi Layers Metal Electrodes
High Junction Temperature
Good Commutation Performance
APPLICATIONS
Heater Control
Motor Speed Controller
Mixer
ABSOLUTE RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Test condition
Value
Unit
CT401L-600T/S
600
V
CT401L-800T/S
800
V
1
A
A
Repetitive peak offstate voltage
Tj=25℃
IT(RMS)
RMS on-state current
SOT-23-3LK(TC≤60℃),Fig. 1,2
ITSM
Non repetitive surge
peak on-state current
Full sine wave ,Tj(init)=25℃,
tp=20ms; Fig. 3,5
10
I2t value
tp=10ms
1.28
Critical rate of rise of
on-state current
IG=2*IGT, tr≤10ns, F=120HZ,
Tj=125℃
Peak gate current
tp=20µs, Tj=125℃
PG(AV)
Average gate power
Tj=125℃
TSTG
Storage temperature
-40~+150
Operating junction
temperature
-40~+125
VDRM/ VRRM
I2t
dIT/dt
IGM
Tj
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1
Ⅰ-Ⅱ-Ⅲ
Ⅳ
A2s
50
10
A/μs
2
A
0.5
W
℃
Rev. - 1.0
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Test condition
Symbol
Parameter
IGT
Gate trigger current
VD=12V,
I T =0.1A,
Ⅰ-Ⅱ-Ⅲ
Ⅳ
VGT
Gate trigger voltage
Tj=25℃,
Fig. 6
Ⅰ-Ⅱ-Ⅲ - Ⅳ
VGD
Non-triggering gate
voltage
VD=VDRM, Tj=125℃
VD=12V, Ⅰ-Ⅱ-Ⅲ - Ⅳ
I GT =0.1A,
Ⅰ-Ⅲ - Ⅳ
Tj=25℃,
Ⅱ
Fig. 6
IH
Holding current
IL
Latching current
dVD/dt
Critical rate of rise
of off-state
VD=67%VDRM, Gate
Open Tj=125℃
VTM
On-state Voltage
ITM=1.5A ,
tp=380μs ,
Fig. 4
IDRM / IRRM
Repetitive peak offstate current
Value
Unit
T
S
≤3
≤8
≤5
≤10
mA
≤1.3
V
≥0.2
V
≤5
≤5
mA
≤6
≤10
mA
≤10
≤15
mA
≥20
≥50
V/μs
≤1.55
V
VD=VDRM/VRRM, Tj=25℃
≤5
≤5
μA
VD=VDRM/VRRM,Tj=125℃
≤0.1
≤0.1
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case (AC)
SOT-23-3LK
32
℃/W
Rth (j-a)
Junction to ambient
SOT-23-3LK
400
℃/W
PART NUMBER
CT 4
01
L
TRIACs
-600
T
S:IGT1-3≤8mA, IGT4≤10mA
T:IGT1-3≤3mA , IGT4≤5mA
4 Quadrant
Repetitive peak off-state voltage
600:≥ 600V
IT(RMS)=1A
800:≥ 800V
Package Type
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2
Rev. - 1.0
CHARACTERISTICS CURVES
FIG.1: Maximum power dissipation versus RMS
on-state current (full cycle)
FIG.2: RMS on-state current versus case temperature
(full cycle)
1.4
P(W)
I T(RMS) (A)
1.2
1.2
1.0
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
0
0.2
0.4
0.6
0.8
0
-50
1.0
I T(RMS) (A)
0
100
150
Tc
)
FIG.4: On-state characteristics (maximum values)
2.0
I TM (A)
I TMS (A)
FIG.3: Surge peak on-state current versus number of cycles
50
10
8
Tj=125ºC
1.5
6
1.0
Tj=25ºC
4
0.5
2
0
0
0
10
100
1000
Number of cycles
0.5
1.0
)
2.5
I GT,I H,I L(T) / I GT,I H,I L(T=25
I TMS (A)
2.0
2.5
3.0
V TM (V)
FIG.6: Relative variations of gate trigger current, holding
current and latching current versus junction
temperature (typical values)
FIG.5: Non-repetitive surge peak on-state current for
a sinusoidal pulse with width tp < 10ms
1000
1.5
2.0
1.5
100
IH
IGT
IT
1.0
0.5
10
0.01
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0.1
1
0.0
-40
10
tp(ms)
-20
0
20
40
60
80
100
120
140
Tj
3
)
Rev. - 1.0
SOT-23-3LK
http://www.jscj-elec.com/
4
Rev. - 1.0
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