CT408R-800S

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-262K Plastic-Encapsulate Thyristors CT 4 08R 4Q TRIACs MAIN CHARACTERISTICS 8A IT(RMS) VDRM/VRRM CT408R-600S/C 600V CT408R-800S/C 800V 1.55V VTM TO-262K 1.MAIN TERMINAL 1 2.MAIN TERMINAL 2 3.GATE FEATURES  NPNPN 5-layer Structure TRIACs  Mesa Glass Passivated Technology  Multi Layers Metal Electrodes  High Junction Temperature  Good Commutation Performance APPLICATIONS MARKING  Heater Control CT408R:Series Code  Motor Speed Controller 600S:Depends on VDRM  Mixer and IGT XXX:Internal Code ABSOLUTE RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Test condition Value Unit CT408R-600S/C 600 V CT408R-800S/C 800 V 8 A Repetitive peak offstate voltage Tj=25℃ IT(RMS) RMS on-state current TO-262K(TC≤105℃)，Fig. 1,2 ITSM Non repetitive surge peak on-state current Full sine wave ，Tj(init)=25℃, tp=20ms; Fig. 3,5 80 A I2t value tp=10ms 36 A2s Critical rate of rise of on-state current IG=2*IGT, tr≤10ns, F=120HZ, Tj=125℃ Peak gate current tp=20µs, Tj=125℃ PG(AV) Average gate power Tj=125℃ TSTG Storage temperature -40~+150 Operating junction temperature -40~+125 VDRM/ VRRM I2t dIT/dt IGM Tj www.jscj-elec.com 1 Ⅰ-Ⅱ-Ⅲ Ⅳ 50 10 A/μs 2 A 0.5 W ℃ Rev. - 1.0 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Test condition Symbol Parameter IGT Gate trigger current VD=12V, I T =1A, Ⅰ-Ⅱ-Ⅲ Ⅳ VGT Gate trigger voltage Tj=25℃, Fig. 6 Ⅰ-Ⅱ-Ⅲ - Ⅳ VGD Non-triggering gate voltage VD=VDRM, Tj=125℃ VD=12V, Ⅰ-Ⅱ-Ⅲ - Ⅳ I GT =0.1A, Ⅰ-Ⅲ - Ⅳ Tj=25℃, Ⅱ Fig. 6 IH Holding current IL Latching current dVD/dt Critical rate of rise of off-state VD=67%VDRM, Gate Open Tj=125℃ VTM On-state Voltage ITM=10A，tp=380μs , Fig. 4 IDRM / IRRM Repetitive peak offstate current Value Unit S C ≤8 ≤20 ≤10 ≤35 mA ≤1.3 V ≥0.2 V ≤10 ≤20 mA ≤15 ≤25 mA ≤20 ≤35 mA ≥10 ≥20 V/μs ≤1.55 V VD=VDRM/VRRM, Tj=25℃ ≤5 ≤5 μA VD=VDRM/VRRM,Tj=125℃ ≤1 ≤1 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-c) Junction to case (AC) TO-262K 1.6 ℃/W Rth (j-a) Junction to ambient TO-262K 45 ℃/W PART NUMBER CT 4 08 R -600 C S：IGT1-3≤8mA , IGT4≤10mA C：IGT1-3≤20mA IGT4≤35mA TRIACs 4 Quadrant Repetitive peak off-state voltage 600：≥ 600V IT(RMS)=8A 800：≥ 800V Package Type www.jscj-elec.com 2 Rev. - 1.0 CHARACTERISTICS CURVES FIG.2: RMS on-state current versus case temperature (full cycle) 12 I T(RMS) (A) P(W) FIG.1: Maximum power dissipation versus RMS on-state current (full cycle) 10 8 9 8 7 6 5 6 4 4 3 2 2 1 0 0 2 4 6 0 -50 8 I T(RMS) (A) 0 100 Tc 150 ) FIG.4: On-state characteristics (maximum values) I TM (A) I TMS (A) FIG.3: Surge peak on-state current versus number of cycles 50 80 25 Tj=125ºC 20 60 15 40 10 20 0 Tj=25ºC 5 0 0 10 100 1000 Number of cycles 0.5 1.0 1.5 2.0 2.5 3.0 V TM (V) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) ) 100 I TMS (A) 1000 I GT,I H,I L(T) / I GT,I H,I L(T=25 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms 3.0 2.5 2.0 1.5 IH IGT IL 1.0 10 0.5 Tj(ºC) 0.01 www.jscj-elec.com 0.1 1 0.0 -40 10 tp(ms) -20 0 20 40 60 80 100 120 140 Tj 3 ) Rev. - 1.0 TO-262K http://www.jscj-elec.com/ 4 Rev. - 1.0