CXT5401

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors CXT5401 TRANSISTOR (PNP) SOT-89-3L FEATURE z Switching and amplification in high voltage Applications such as telephony z Low current(max. 500mA) z High voltage(max.160v) 1. BASE 1 2. COLLECTOR 1 22 3 3. EMITTER 0$5.,1*5401 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.5 W 250 ℃/W 150 ℃ -55~150 ℃ TJ Thermal Resistance From Junction To Ambient Junction Temperature Tstg Storage Temperature RθJA ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE = -10μA, IC=0 -5 V Collector cut-off current ICBO VCB = -120 V, IE=0 -50 nA Emitter cut-off current IEBO VEB= -3V, IC=0 -50 nA hFE(1) VCE= -5V, IC=-1 mA 50 hFE(2) VCE= -5V, IC= -10 mA 60 hFE(3) VCE= -5V, IC=-50 mA 50 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) IC= -10 mA, IB= -1 mA -0.2 V VCE(sat) IC= -50 mA, IB= -5 mA -0.5 V VBE(sat) IC= -10 mA, IB= -1 mA -1 V VBE(sat) IC= -50 mA, IB= -5 mA VCE= -10V, IC= -10mA, f = 100MHz VCB=-10V, IE= 0,f=1MHz VCE= -5.0V, IC= -200μA, RS= 10Ω,f =10Hz to15.7kHz -1 V 300 MHz 6 pF 8 dB Transition frequency fT Output Capacitance Cob Noise Figure NF www.cj-elec.com 300 1 100 E D,Nov,2015 Typical Characteristics Static Characteristic - 30 COMMON EMITTER Ta=25℃ -200uA IC DC CURRENT GAIN -160uA -140uA - 20 -120uA -100uA - 15 -80uA - 10 VCE= -5V o Ta=100 C -180uA - 25 COLLECTOR CURRENT hFE —— IC 500 hFE (mA) - 35 o Ta=25 C 100 -60uA -40uA 10 - 5 IB=-20uA 0 0 -2 - 4 - 10 - 8 -6 - 12 COLLECTOR-EMITTER VOLTAGE VBEsat —— - 1.0 - 14 VCE 4 - 0.3 - 18 - 16 IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) - 0.9 - 0.8 Ta=25℃ - 0.6 Ta=100℃ - 0.5 - 0.4 - 0.3 -0.1 -1 -10 COLLECTOR CURRENT Cob / Cib —— IC (mA) IC Ta=100℃ Ta=25℃ -0.1 -1 -10 COLLECTOR CURRENT fT 300 (MHz) f=1MHz IE=0 / IC=0 o -100 IC (mA) —— IC 250 TRANSITION FREQUENCY C fT Ta=25 C - 500 - 100 β=10 VCB / VEB (pF) IC -0.1 -0.01 -100 50 CAPACITANCE VCEsat —— (mA) Cib - 10 COLLECTOR CURRENT -1 β=10 - 0.7 -1 (V) 10 Cob 200 150 100 50 VCE=-10V o 1 - 0.5 Pc 0.6 COLLECTOR POWER DISSIPATION Pc (W) 0 -10 REVERSE VOLTAGE —— V Ta=25 C -0 -5 -10 -15 COLLECTOR CURRENT (V) -20 - IC -25 -30 (mA) Ta 0.5 0.4 0.3 0.2 0.1 0.0 0 www.cj-elec.com 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) 125 150 2 E D,Nov,2015 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout www.cj-elec.com 3 E D,Nov,2015 SOT-89-3L Tape and Reel www.cj-elec.com 4 E D,Nov,2015