CXT5551

CXT5551

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    SOT89-3

  • 描述:

    SOT89-3L 600mA 100MHz

  • 数据手册
  • 价格&库存
CXT5551 数据手册
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors CXT5551 SOT-89-3L TRANSISTOR (NPN) FEATURES 1 Switching and amplification in high voltage z 1. BASE Applications such as telephony z Low current(max. 600mA) z High voltage(max.180V) 2. COLLECTOR 3. EMITTER Marking: 1G6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0.5 W TJ,Tstg Operation Junction and Storage Temperature Range -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μ A,IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=10 μ A,IC=0 6 V Collector cut-off current ICBO VCB=120V,IE=0 50 nA Emitter cut-off current IEBO VEB=4V,IC=0 50 nA hFE(1) VCE=5V,IC=1mA 80 hFE(2) VCE=5V,IC=10mA 100 hFE(3) VCE=5V,IC=50mA 30 VCE(sat) IC=10mA,IB=1mA 0.15 V VCE(sat) IC=50mA,IB=5mA 0.2 V VBE(sat) IC=10mA,IB=1mA 1 V VBE(sat) IC=50mA,IB=5mA 1 V DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency fT Collector output capacitance Cob Noise figure NF www.jscj-elec.com VCE=10V,IC=10mA,f=100MHz VCB=10V,IE=0,f=1MHz VCE=5V,Ic=0.2mA, f=10Hzto15.7KHZ,Rs=10Ω 1 300 100 MHz 6 pF 8 dB Rev. - 2.0 Typical Characteristics Static Characteristic 35 180uA (mA) hFE 160uA 25 140uA 20 DC CURRENT GAIN IC COLLECTOR CURRENT VCE= 5V COMMON EMITTER Ta=25℃ 200uA 30 hFE —— IC 300 120uA 100uA 15 80uA 60uA 10 Ta=100℃ 200 Ta=25℃ 100 40uA 5 IB=20uA 0 0.3 0 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 14 VCE 16 18 1 10 100 COLLECTOR CURRENT (V) IC VCEsat —— 1000 IC 500 (mA) IC β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) β=10 800 Ta=25℃ 600 Ta=100℃ 400 200 0.1 1 10 COLLECTOR CURRENT Cob / Cib 100 100 IC Ta=100℃ Ta=25℃ 10 0.1 300 VCB / VEB —— 10 fT 200 (MHz) Ta=25℃ —— 100 IC 300 (mA) IC 100 C TRANSITION FREQUENCY fT Cib (pF) 1 COLLECTOR CURRENT (mA) f=1MHz IE=0 / IC=0 CAPACITANCE 100 10 Cob 30 VCE=10V 1 10 1 10 REVERSE VOLTAGE Pc 0.6 COLLECTOR POWER DISSIPATION PC (W) Ta=25℃ —— V 1 20 (V) 30 10 COLLECTOR CURRENT IC (mA) Ta 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 125 150 (℃ ) 2 Rev. - 2.0 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout 1.400 0.950 45° 1.600 2.200 1.300 0.700 0.900 0.800 1.500 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.0 SOT-89-3L Tape and Reel www.jscj-elec.com 4 Rev. - 2.0
CXT5551 价格&库存

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CXT5551
  •  国内价格
  • 20+0.69990
  • 100+0.41740
  • 500+0.29220
  • 1000+0.20870
  • 2000+0.19840
  • 10000+0.18370

库存:1700

CXT5551
  •  国内价格
  • 10+0.66040
  • 100+0.39400
  • 500+0.27580
  • 1000+0.19700
  • 2000+0.18710
  • 10000+0.17330

库存:1869

CXT5551
    •  国内价格
    • 10+0.31789
    • 100+0.26087
    • 200+0.25696
    • 400+0.23235
    • 1000+0.19909

    库存:2957