DAN217

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes DAN217 SWITCHING DIODE SOT-23 FEATURES z Small surface mounting type Two diode elements are connected in series z 1 3 MARKING: BA1 2 BA1 BA1 Solid dot = Green molding compound device,if none,the normal device. Maximum Ratings @Ta=25℃ Symbol Limit Unit VRM 80 V DC Blocking Voltage VR 80 V Forward Continuous Current IFM 300 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A Average Rectified Output Current IO 100 mA Power Dissipation PD 200 mW RθJA 625 ℃/W TJ 150 ℃ TSTG -55~+150 ℃ Parameter Non-Repetitive Peak Reverse Voltage Thermal resistance From Junction to ambient Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit V(BR) IR= 100μA Reversen voltage leakage current IR VR=70V 0.1 μA Forward voltage VF IF=100mA 1.2 V Reverse breakdown voltage www.cj-elec.com 1 80 V B,Oct,2014 Typical Characteristics Forward 100 Characteristics (nA) (mA) Ta =2 5℃ 3 REVERSE CURRENT IR 10 Ta =1 00 ℃ IF Characteristics 300 30 FORWARD CURRENT Reverse 1000 1 Ta=100℃ 100 30 Ta=25℃ 10 3 0.3 0.1 0.0 1 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 1.2 0 REVERSE VOLTAGE Capacitance Characteristics 1.6 40 20 (V) 60 VR 80 (V) Power Derating Curve 300 Ta=25℃ f=1MHz (mW) PD 1.4 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 250 1.2 200 150 100 50 0 1.0 0 5 10 REVERSE VOLTAGE www.cj-elec.com 15 VR 20 0 (V) 25 50 75 AMBIENT TEMPERATURE 2 125 100 Ta 150 (℃) B,Oct,2014    Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout  3 B,Oct,2014     4 B,Oct,2014