DAN217U

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes SOT-323 DAN217U SWITCHING DIODE FEATURES z Small surface mounting type z Two diode elements are connected in series 1 3 2 MARKING:A7 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Symbol Limit Unit Peak reverse voltage VRM 80 V DC reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Parameter Surge current (1μs) (10ms) 400 IFSM mA 1000 Power dissipation PD 200 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~+150 ℃ Operating temperature range Topr -40~+100 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max V(BR) IR= 100μA Reverse voltage leakage current IR VR=70V 0.2 μA Forward voltage VF IF=100mA 1200 mV Reverse breakdown voltage 80 Unit V A,May,2011 Typical Characteristics Forward 100 Characteristics Characteristics 300 Ta=100℃ (nA) (mA) Ta =2 5℃ 3 REVERSE CURRENT IR 10 Ta =1 00 ℃ IF Reverse 1000 30 FORWARD CURRENT DAN217U 1 100 30 Ta=25℃ 10 3 0.3 0.1 0.0 1 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 1.2 0 40 REVERSE VOLTAGE Capacitance Characteristics 1.4 20 (V) 60 VR 80 (V) Power Derating Curve 300 Ta=25℃ f=1MHz (mW) PD POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 250 1.3 1.2 1.1 200 150 100 50 1.0 0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃) A,May,2011