JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
ESDBL3 V3 D5
Bi-direction ESD Protection Diode
DESCRIPTION
SOD-523
Designed to protect voltage sensitive electronic components from ESD and other
transients. Excellent clamping capability, low leakage, low capacitance, and fast
response time provide best in class protection on designs that are exposed to ESD.
The combination of small size, low capacitance, and high level of ESD protection
makes them a flexible solution for applications such as HDMI, Display Port TM, and
MDDI interfaces. It is designed to replace multiplayer varistors (MLV) in consumer
equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
FEATURES
z
Bi-directional ESD protection of one line
z
Excellent package:1.20mm×0.80mm×0.60mm
z
Low capacitance: 15pF(TYP.)
z
Fast response time
z
Reverse stand−off voltage: 3.3V
z
JESD22-A114-B ESD Rating of class 3B per human
z
Low reverse clamping voltage
z
Low leakage current
body model
z
IEC 61000-4-2 Level 4 ESD protection
APPLICATIONS
Computers and peripherals
Portable electronics
High speed data lines
FireWire
Audio and video equipment
Other electronics equipments communi-
Cellular handsets and accessories
Subscriber identity module(SIM) card protection
cation systems
MARKING
X
X = Device code
Front side
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Rev. - 2.0
ESDBL3V3D5
ESDLJ12VY1
CHANGJING ELEC.TECH.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
Air Model
IEC 61000-4-2 ESD Voltage
Contact Model
JESD22-A114-B ESD Voltage
Per Human Body Model
Peak Pulse Power
VESD(1)
Operation Junction and Storage Temperature Range
kV
±0.4
(2)
70
W
(2)
7
A
TL
260
℃
TJ,Tstg
-55 ~ +150
℃
IPP
Lead Solder Temperature − Maximum (10 Second Duration)
±25
±16
PPP
Peak Pulse Current
Unit
±25
Machine Model
ESD Voltage
Limit
(1).Device stressed with ten non-repetitive ESD pulses.
(2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
ESD standards compliance
IEC61000-4-2 Standard
JESD22-A114-B Standard
Contact Discharge
Air Discharge
ESD Class
Human Body Discharge V
Level
Test Voltage kV
Level
Test Voltage kV
0
0~249
1
2
1
2
2
4
2
4
1A
1B
1C
250~499
500~999
1000~1999
3
6
3
8
4
8
4
15
2
3A
3B
2000~3999
4000~7999
8000~15999
ESD pulse waveform according to IEC61000-4-2
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8/20μs pulse waveform according to IEC 61000-4-5
2
Rev. - 2.0
ESDBL3V3D5
CHANGJING ELEC.TECH.
ELECTRICAL PARAMETER
Symbol
Parameter
VC
Clamping Voltage @ IPP
IPP
Peak Pulse Current
VBR
Breakdown Voltage @ IT
IT
Test Current
IR
Reverse Leakage Current @ VRWM
VRWM
Reverse Standoff Voltage
V-I characteristics for a Bi-directional TVS
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Reverse stand off voltage
Reverse leakage current
Breakdown voltage
Clamping voltage
Junction capacitance
Test conditions
Symbol
Min
Typ
(1 )
VRWM
IR
V(BR)
(2)
VC
CJ
VRWM=3.3V
IT=1mA
4
IPP=7A
VR=0V,f=1MHz
15
Max
Unit
3.3
V
0.4
μA
6
V
10
V
20
pF
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5
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Rev. - 2.0
ESDBL3V3D5
CHANGJING ELEC.TECH.
TYPICAL CHARACTERISTICS
Reverse
Capacitance Characteristics
Characteristics
100
25
Pulsed
Ta=25℃
80
f=1MHz
20
40
JUNCTION CAPACITANCE
CJ (pF)
REVERSE CURRENT IR
(mA)
60
Ta=25℃
20
0
Ta=100℃
-20
-40
-60
15
10
5
-80
-100
-6
-5
-4
-3
-2
-1
0
REVERSE VOLTAGE
VC ——
1
2
VR
3
4
5
0
0.0
6
(V)
0.5
1.0
1.5
REVERSE VOLTAGE
2.0
VR
2.5
3.0
3.3
(V)
IPP
16
Ta=25℃
CLAMPING VOLTAGE VC(V)
tp=8/20us
12
8
4
0
0
2
4
6
8
10
REVERSE PEAK PULSE CURRENT IPP(A)
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Rev. - 2.0
ESDBL3V3D5
CHANGJING ELEC.TECH.
PACKAGE OUTLINE AND PAD LAYOUT INFORMATION
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NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
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Rev. - 2.0
ESDBL3V3D5
CHANGJING ELEC.TECH.
TAPE AND REEL INFORMATION
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Rev. - 2.0
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