FMMT449

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T FMMT449 TRANSISTOR (NPN) SOT–23 FEATURES  Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(1) * VCE=2V, IC=50mA 70 hFE(2) * VCE=2V, IC=500mA 100 hFE(3) * VCE=2V, IC=1A 80 hFE(4) * VCE=2V, IC=2A 40 VCE(sat)1* IC=1A, IB=100mA 0.5 V VCE(sat)2* IC=2A, IB=200mA 1 V VBE(sat)* IC=1A, IB=100mA 1.25 V 1 V Base-emitter voltage VBE* Transition frequency fT Collector output capacitance 300 Cob VCE=2V, IC=1A VCE=10V,IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz 150 MHz 15 pF *Pulse test www.cj-elec.com 1 B,Oct,2014 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 2 B,Oct,2014 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 3 B,Oct,2014 A,Jun,2014