FMMT493

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T FMMT493 TRANSISTOR (NPN) SOT–23 FEATURES  Complementary Type FMMT593 MARKING:493 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1000 mA PC Collector Power Dissipation 250 mW Thermal Resistance From Junction To Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 100 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=100V, IE=0 0.1 µA Collector cut-off current ICES VCES=100V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(1) * VCE=10V, IC=1mA 100 hFE(2) * VCE=10V, IC=250mA 100 hFE(3) * VCE=10V, IC=0.5A 60 hFE(4) * VCE=10V, IC=1A 20 VCE(sat)1* IC=500mA, IB=50mA 0.3 V VCE(sat)2* IC=1A, IB=100mA 0.6 V VBE(sat)* IC=1A, IB=100mA 1.15 V 1 V Base-emitter voltage VBE* Transition frequency fT Collector output capacitance 300 Cob VCE=10V, IC=1A VCE=10V,IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz 150 MHz 10 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. www.cj-elec.com 1 C,Oct,2014 A,Jun,2014 Typical Characteristics Static Characteristic 350 hFE 27uA 24uA 21uA 18uA 15uA 12uA 2 o Ta=100 C 300 DC CURRENT GAIN COLLECTOR CURRENT VCE= 10V COMMON EMITTER Ta=25℃ 4 hFE —— IC 400 30uA 6 IC (mA) 8 250 200 o Ta=25 C 9uA 150 6uA IB=3uA 0 100 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE 12 VCE 14 1 VBEsat —— IC 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 100 IC 800 Ta=25℃ 600 400 Ta=100℃ 1 10 100 COLLECTOR CURRENT fT 180 IC —— IC 100 Ta=100℃ Ta=25℃ 10 0.1 1000 1 (mA) 10 100 COLLECTOR CURRENT IC IC 1000 (mA) IC —— VBE 1000 IC (mA) 160 fT 140 100 o Ta=100 C COLLECTOR CURRENT 120 100 80 60 40 10 Ta=25℃ 1 VCE=10V 20 VCE=10V o Ta=25 C 0 0 20 40 60 80 COLLECTOR CURRENT Pc 300 COLLECTOR POWER DISSIPATION Pc (mW) 1000 (mA) β=10 200 0.1 (MHz) VCEsat —— 1000 β=10 TRANSITION FREQUENCY 10 COLLECTOR CURRENT (V) —— IC 0.1 100 100 200 300 400 500 600 BASE-EMITTER VOLTAGE (mA) 700 800 900 1000 VBE(mV) Ta 250 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 C,Oct,2014 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 3 C,Oct,2014 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 C,Oct,2014 A,Jun,2014