FMMT593

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT593 SOT-23 TRANSISTOR (PNP) FEATURES  Complementary Type FMMT493 MARKING:593 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power Dissipation 250 mW RΘJA Thermal Resistance From Junction To Ambient 500 ℃/W TJ,Tstg Operation Junction and Storage Temperature Range -55～+150 ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -100 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-100V, IE=0 -0.1 µA Collector cut-off current ICES VCES=-100V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 µA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(1) * VCE=-5V, IC=-1mA 100 hFE(2) * VCE=-5V, IC=-250mA 100 hFE(3) * VCE=-5V, IC=-0.5A 100 hFE(4) * VCE=-5V, IC=-1A 50 VCE(sat)1* IC=-250mA, IB=-25mA -0.2 V VCE(sat)2* IC=-500mA, IB=-50mA -0.3 V VBE(sat)* IC=-500mA, IB=-50mA -1.1 V -1 V Base-emitter voltage VBE* Transition frequency fT Collector output capacitance 300 Cob VCE=-5V, IC=-1mA VCE=-10V,IC=-50mA, f=100MHz VCB=-10V, IE=0, f=1MHz 50 MHz 5 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. www.jscj-elec.com 1 Rev. - 2.0 Typical Characteristics Static Characteristic -400 -2.8mA -2.4mA o IC -300 DC CURRENT GAIN COLLECTOR CURRENT -2.0mA -250 -1.6mA -200 Ta=100 C hFE (mA) IB=-4.0、-3.6、-3.2mA COMMON EMITTER Ta=25℃ -350 hFE —— IC 1000 -1.2mA -150 -0.8mA 100 o Ta=25 C -100 IB=-0.4mA -50 VCE= -5V 10 -0 -0 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE -7 VCE -1 -8 -100 VCEsat —— VBEsat —— IC -1000 -10 COLLECTOR CURRENT (V) IC -1000 (mA) IC -1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) β=10 -800 Ta=25℃ -600 -400 Ta=100℃ -800 -600 -400 Ta=100℃ -200 Ta=25℃ β=10 -200 -1 -0 -10 -100 COLLECTOR CURRENT IC —— -1000 IC -1000 -1 -10 (mA) -100 COLLECTOR CURRENT VBE Cob / Cib 1000 —— IC -1000 (mA) VCB / VEB o Ta=25 C C (pF) -800 -600 CAPACITANCE COLLECTOR CURRENT IC (mA) f=1MHz IE=0 / IC=0 o Ta=100 C Ta=25℃ -400 Cib 100 10 Cob -200 VCE=-5V -0 -200 -400 -600 -800 BASE-EMITTER VOLTAGE fT IC TRANSITION FREQUENCY Pc 0.3 COLLECTOR POWER DISSIPATION Pc (W) —— -1 100 80 60 40 20 -10 REVERSE VOLTAGE VBE(mV) fT (MHz) 120 1 -0.1 -1000 —— V -20 (V) Ta 0.2 0.1 VCE=-10V o Ta=25 C 0 0.0 -0 -20 -40 -60 COLLECTOR CURRENT www.jscj-elec.com -80 IC -100 0 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃ ) Rev. - 2.0 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.0 SOT-23 Tape and Reel www.jscj-elec.com 4 Rev. - 2.0