FMMT619

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors JC(T FMMT619 TRANSISTOR (NPN) SOT-23 FEATURE 3 Low Saturation Voltage 1. BASE MARKING:619 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Power Dissipation 0.35 W RθJA Thermal Resistance from Junction to Ambient 357 ℃/W PCM Maximum Power Dissipation (note 1) 0.625 W RθJA Thermal Resistance from Junction to Ambient (note 1) 200 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ Parameter 2 3. COLLECTOR VCBO Symbol 1 2. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 50 V Collector-emitter breakdown voltage (note 2) V(BR)CEO IC=10mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA ,IC=0 5 V Collector cut-off current ICBO VCB=40V,IE=0 100 nA Emitter cut-off current IEBO VEB=4V,IC=0 100 nA hFE(1) VCE=2V, IC=10mA 200 hFE(2) VCE=2V, IC=0.2A 300 hFE(3) VCE=2V, IC=1A 200 hFE(4) VCE=2V, IC=2A 100 hFE(5) VCE=2V, IC=6A DC current gain (note 2) 40 VCE(sat)1 IC=0.1A,IB=10mA 20 mV VCE(sat)2 IC=1A,IB=10mA 200 mV VCE(sat)3 IC=2A,IB=100mA 220 mV Base-emitter saturation voltage (note 2) VBE(sat) IC=2A,IB=50mA 1 V Base-emitter on voltage (note 2) VBE(on) IC=2A, VCE=2V 1 V VCB=10V, f=1MHz 20 pF Collector-emitter saturation voltage (note 2) Output capacitance Cob Turn-on time t(on) Turn-off time t(off) Transition frequency fT VCC=10V, IC=1A, IB1=-IB2=10mA VCE=10V,IC=50mA, f=100MHz 100 170 ns 750 ns MHz Notes : 1.Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm. 2. Pulse test: Pulse width≤300μs,duty cycle≤2.0%. www.cj-elec.com 1 D,Jul,2015 A,Jun,2014 Typical Characteristics Static Characteristic COMMON EMITTER Ta=25℃ 1000 0.45mA 0.4mA 300 DC CURRENT GAIN COLLECTOR CURRENT VCE= 2V 0.5mA hFE 400 hFE —— IC 1200 IC (mA) 500 0.35mA 0.3mA 200 0.25mA 0.2mA 0.15mA 100 o Ta=100 C 800 600 o Ta=25 C 400 200 0.1mA IB=0.05mA 0 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE 1 6 VBEsat —— IC 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 800 Ta=25℃ 600 Ta=100℃ 400 100 VCEsat —— 400 β=40 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT (V) IC 1000 (mA) 2000 IC β=20 300 200 Ta=100℃ 100 200 Ta=25℃ 0 0 1 10 100 COLLECTOR CURRENT fT —— 1 100 COLLECTOR CURRENT IC Cob / Cib 1000 —— 1000 IC 2000 (mA) VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C (pF) 150 C CAPACITANCE TRANSITION FREQUENCY 10 (mA) fT (MHz) 200 2000 1000 IC 100 100 Cib Cob 10 50 VCE=10V o Ta=25 C 0 20 0 40 60 COLLECTOR CURRENT VBE —— 80 IC 1 0.1 100 IC 2000 COLLECTOR POWER DISSIPATION Pc (mW) IC (mA) Pc 500 VCE=2V COLLECTOR CURRENT 1 1600 o 1200 Ta=100 C 800 Ta=25℃ 400 0 200 —— V 20 (V) Ta 400 300 200 100 0 400 600 BASE-EMITTER VOLTAGE www.cj-elec.com 10 REVERSE VOLTAGE (mA) 800 1000 0 25 50 75 AMBIENT TEMPERATURE VBE(mV) 2 100 Ta 125 150 (℃ ) A,Jun,2014 D,Jul,2015 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 3 D,Jul,2015 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 D,Jul,2015 A,Jun,2014