FMMT720

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T FMMT720 SOT–23 TRANSISTOR (PNP) FEATURE z Switching transistor z Extremely low saturation voltage z Complementary NPN type: FMMT619 1. BASE 2. EMITTER 3. COLLECTOR APPLICATION z Gate Driving MOSFETs and IGBTs z DC-DC converters z Charging circuit z Power switches MARKING: 720 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IB Base Current -0.5 A IC* Collector Current -Continuous -1.5 A ICM Peak Pulse Current -4 A PC Total Collector Dissipation 350 mW Thermal Resistance from Junction to Ambient 357 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RΘJA www.cj-elec.com 1 C,Jul,2015 A,Jun,2014 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO* IC= -10mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 μA Collector cut-off current ICES VCE=-35V,VBE=0 -0.1 μA Emitter cut-off current IEBO VEB= -4V, IC=0 -0.1 μA DC current gain hFE(1) * VCE= -2V, IC=-10mA 300 hFE(2) * VCE=-2V, IC=-100mA 300 hFE(3) * VCE=-2V, IC=-1A 180 hFE(4) * VCE=-2V, IC=-1.5A 60 hFE(5) * VCE=-2V, IC=-3A 12 VCE(sat) (1) * IC=-0.1A, IB=-10mA -40 mV VCE(sat) (2) * IC=-1A, IB=-50mA -220 mV VCE(sat) (3) * IC=-1.5A, IB=-100mA -330 mV Base-emitter saturation voltage VBE(sat) * IC=-1.5A, IB= -75mA -1 V Base-emitter voltage VBE(on) * VCE=-2V, IC=-1.5A -1 V Transition frequency fT Collector-emitter saturation voltage VCE=-10V,IC=-50mA, f=100MHZ Collector output capacitance Cob VCB=-10V,f=1MHZ Turn-on Time t(on) Turn-off Time t(off) VCC=-15V, IC=-0.75A, IB1= IB2=-15mA 150 MHz 25 pF 40 ns 435 ns *Measured under pulse conditions . Pulse width =300μs. Duty cycle≤2%. www.cj-elec.com 2 C,Jul,2015 A,Jun,2014 Typical Characteristics Static Characteristic COMMON EMITTER Ta=25℃ -0.5mA VCE= -2V -0.45mA IC -300 DC CURRENT GAIN -0.4mA COLLECTOR CURRENT hFE —— IC 1000 hFE (mA) -350 -0.35mA -200 -0.3mA -0.25mA -0.2mA -100 -0.15mA 800 o Ta=100 C 600 400 o Ta=25 C 200 -0.1mA IB=-0.05mA -0 -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE -1 VBEsat —— IC -10 -800 Ta=25℃ -600 Ta=100℃ -400 -100 COLLECTOR CURRENT VCEsat —— -400 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -6 (V) VCE IC -1000 -1500 (mA) IC β=20 -300 -200 Ta=100℃ -100 Ta=25℃ β=20 -200 -1 -0 -10 -100 COLLECTOR CURRENT IC —— -1500 -1000 -1500 IC -1 -10 (mA) VBE Cob / Cib 1000 -1000 -1500 -100 COLLECTOR CURRENT —— IC (mA) VCB / VEB IC (mA) f=1MHz IE=0 / IC=0 o C COLLECTOR CURRENT Ta=25 C (pF) -1200 CAPACITANCE -900 o Ta=100 C -600 Ta=25℃ 100 Cib Cob 10 -300 VCE=-2V -0 -200 -400 -600 -800 BASE-EMITTER VOLTAGE fT IC TRANSITION FREQUENCY Pc 0.5 COLLECTOR POWER DISSIPATION Pc (W) —— -1 -10 REVERSE VOLTAGE VBE(mV) 160 fT (MHz) 200 1 -0.1 -1000 120 80 40 —— V (V) -20 Ta 0.4 0.3 0.2 0.1 VCE=-10V o Ta=25 C 0 0.0 -0 -20 -40 -60 COLLECTOR CURRENT www.cj-elec.com -80 IC -100 0 25 50 75 AMBIENT TEMPERATURE (mA) 3 100 Ta 125 150 (℃ ) C,Jul,2015 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 4 C,Jul,2015 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 5 C,Jul,2015 A,Jun,2014