MCR100-8

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Thyristors SOT-89-3L MCR100- 6,- 8 Silicon Controlled Rectifier 1.KATHODE FEATURES 2.ANODE Current-IGT : 200 µA 3.GATE ITRMS : 0.8 A VRRM/ VDRM : MCR100-6: 400 V MCR100-8: 600 V Operating and storage junction temperature range TJ，Tstg : -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Ta=25℃ unless otherwise specified） Parameter Symbol Test conditions Min Max Unit On state voltage VTM* ITM=1A 1.7 V Gate trigger voltage VGT VAK=7V 0.8 V Peak Repetitive forward and reverse VDRM blocking voltage IDRM= 10 µA AND MCR100-6 VRRM MCR100-8 600 Peak forward or reverse blocking IDRM VAK= Rated Current IRRM VDRM or VRRM 10 IHL= 20mA ,VAK = 7 V IH Holding current Gate trigger current V 400 µA 5 mA A2 5 15 µA A1 15 30 µA A 30 80 µA B 80 200 µA VAK=7V IGT * Forward current applied for 1 ms maximum duration，duty cycle≤1%。 B,May,2013