MJD31C

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD31C TO-252-2L TRANSISTOR (NPN) FEA TURES z Designed for General Purpose Amplifier and Low Speed Switching Applications. z Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) z Straight Lead Version in Plastic Sleeves (“–1” Suffix) z Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) z Electrically Similar to Popular TIP31 and TIP32 Series 1.BASE 2.COLLECTOR 2 3.EMITTER  MJD31C XXXX 1 3 Equivalent Circuit MJD31C 'HYLFHFRGH 6ROLGGRW *UHHQPROGLQQFRPSRXQGGHYLFH  LIQRQHWKHQRUPDOGHYLFH XXXX=Code MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Max Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 1.25 W TJ,Tstg Operation Junction and Storage Temperature Range -55-150 ℃ www.jscj-elec.com 1 Rev. - 2.1 ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 100 V Collector-emitter breakdown voltage * VCEO(sus) IC= 30mA, IB=0 100 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 5 V Collector cut-off current ICES VCE=100V, VEB=0 20 μA Collector cut-off current ICEO VCE= 60V, IB= 0 50 μA Emitter cut-off current IEBO VEB=5V, IC=0 1 mA hFE(1) VCE= 4V, IC= 1A 25 hFE(2) VCE=4 V, IC= 3A 15 DC current gain 75 Collector-emitter saturation voltage VCE(sat) IC=3A, IB=0.375A 1.2 V Base-emitter voltage VBE(on) VCE= 4V, IC=3A 1.8 V Transition frequency fT VCE=10V , IC=0.5A,fT=1KHz KH MHZ * Pulse Test: PW≤300µs, Duty Cycle≤2%. www.jscj-elec.com 2 Rev. - 2.1 Typical Characteristics Static Characteristic 1.6 COMMON EMITTER Ta=25℃ COLLECTOR CURRENT 1.0 14mA 12mA 0.8 10mA 0.6 8mA 0.4 hFE 16mA 80 DC CURRENT GAIN 18mA 1.2 VCE= 4V 90 20mA IC (A) 1.4 hFE —— IC 100 70 6mA o Ta=100 C 60 50 o Ta=25 C 40 30 4mA 0.2 20 IB=2mA 0.0 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE VCE 7 10 1E-3 8 VBEsat —— IC 1.2 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 1.0 Ta=25℃ 0.6 0.4 Ta=100℃ 0.1 COLLECTOR CURRENT VCEsat —— 400 β=8 0.8 0.01 (V) IC 1 (A) 3 IC β=8 300 200 Ta=100℃ 100 0.2 Ta=25℃ 0.0 1E-4 1E-3 0.01 0.1 COLLECTOR CURRENT VBE —— 3 IC 1 0 1E-4 3 IC (MHz) 0.01 0.1 COLLECTOR CURRENT IC fT 30 1 IC (A) 1E-3 (A) —— 3 1 (A) IC 25 o fT Ta=100 C TRANSITION FREQUENCY COLLECTOR CURRENT 0.1 0.01 Ta=25℃ 1E-3 20 15 10 5 VCE=10V VCE=4V 0.3 0.4 0.5 0.6 BASE-EMITTER VOLTAGE 2000 Cob / Cib 0.7 o 0 10 0.8 COLLECTOR CURRENT VCB / VEB —— o (pF) Ta=25 C CAPACITANCE C Cib 100 Cob 10 0.1 1 REVERSE VOLTAGE www.jscj-elec.com 10 V Pc 2.0 f=1MHz IE=0 / IC=0 1000 500 100 VBE(V) COLLECTOR POWER DISSIPATION Pc (W) 1E-4 0.2 Ta=25 C —— IC (mA) Ta 1.5 1.0 0.5 0.0 20 0 (V) 25 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 150 (℃ ) Rev. - 2.1 TO-252-2L Package Outline Dimensions D A D1 c V L3 h E φ L4 L A1 L2 L1 D2 b e θ Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 Φ θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 1.100 1.300 0° 8° 0.000 0.300 5.250 REF. Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0.043 0.051 0° 8° 0.000 0.012 0.207 REF. TO-252-2L Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.1 TO-252-2L Tape and Reel www.jscj-elec.com 5 Rev. - 2.1