MMBD1503A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD1503A SOT-23 FEATURES  Low Leakage  High Conductance MARKING: A13 A13 A13 Solid dot = Green molding compound device,if none,the normal device. MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR DC Blocking Voltage 200 V IO Continuous Forward Current 200 mA IFM Peak Forward Current 700 mA IFSM Non-repetitive Peak Forward Surge Current @t=8.3ms 2.0 A PD Power Dissipation 350 mW Thermal Resistance from Junction to Ambient 357 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Reverse voltage V(BR) Reverse current IR Forward voltage Total capacitance www.cj-elec.com VF Ctot Test conditions IR=5μA Min Typ Max 200 VR=180V V 10 IF=1mA 0.75 IF=10mA 0.85 IF=50mA 0.95 IF=100mA 1.1 IF=200mA 1.3 IF=300mA 1.5 VR=0V,f=1MHz 1 Unit 4 nA V pF B,Nov,2014 Typical Characteristics Forward Characteristics Reverse 100 300 Ta=100℃ IF REVERSE CURRENT IR (mA) (nA) 100 FORWARD CURRENT Characteristics Ta=100℃ Ta=25℃ 10 10 1 Ta=25℃ 0.1 1 0.4 0.01 0.6 0.8 FORWARD VOLTAGE 1.0 VF 1.2 0 80 120 REVERSE VOLTAGE (V) Capacitance Characteristics 2.0 40 160 VR 200 (V) Power Derating Curve 400 Ta=25℃ (mW) 350 300 PD 1.5 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 1.0 0.5 250 200 150 100 50 0.0 0 0 5 10 REVERSE VOLTAGE www.cj-elec.com 15 VR 20 0 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃ ) B,Nov,2014    Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout  3 B,Nov,2014     4 B,Nov,2014