JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
MMBD4148A/SE/CC/CA
SOT-23
SWITCHING DIODE
FEATURES
z
Fast Switching Speed
z
For General Purpose Switching Applications
z
High Conductance
MARKING:
MMBD4148A:5H
MMBD4148CA :D6
MMBD4148CC :D5
MMBD4148SE :D4
Maximum Ratings @Ta=25℃
Parameter
Symbol
Limit
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
VR(RMS)
53
V
Forward Continuous Current
IFM
300
mA
Average Rectified Output Current
IO
200
mA
Peak Forward Surge Current @t=1.0μs
@ t=1.0s
IFSM
2.0
1.0
A
Power Dissipation
PD
350
mW
RθJA
357
℃/W
RMS Reverse Voltage
Thermal Resistance Junction to Ambient
Junction Temperature
Tj
150
℃
Storage Temperature
TSTG
-55~+150
℃
Electrical Ratings @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
Min
Typ
Max
Unit
Conditions
V (BR) 1
100
V
IR=100μA
V (BR) 2
75
V
IR=5μA
VF
1
V
IF=10mA
IR1
5
μA
VR=75V
IR2
25
nA
VR=25V
CT
4
pF
VR=0V,f=1MHz
trr
4
ns
IF=IR=10mA, VR=6V,
Irr=0.1XIR,RL=100Ω
B,Apr,2012
MMBD4148CC
Typical Characteristics
Forward
Reverse
Characteristics
Characteristics
1000
300
100
(nA)
REVERSE CURRENT IR
FORWARD CURRENT
10
Ta=100℃
100
Ta
=2
5℃
Ta
=1
00
℃
30
IF
(mA)
300
3
1
30
10
Ta=25℃
3
0.3
0.1
0.0
1
0.4
0.8
FORWARD VOLTAGE
1.2
VF
1.6
0
20
(V)
40
60
REVERSE VOLTAGE
Capacitance Characteristics
VR
80
(V)
Semiconductor Intrinsic Property
1.4
300
Ta=25℃
f=1MHz
AVERAGE RECTIFIED CURRENT
IF(AV) (mA)
CAPACITANCE BETWEEN TERMINALS
CT (pF)
250
1.3
1.2
1.1
200
150
100
50
1.0
0
0
5
10
REVERSE VOLTAGE
15
VR
20
(V)
0
25
50
75
100
AMBIENT TEMPERATURE
125
Ta
150
175
(℃)
Power Derating Curve
300
POWER DISSIPATION
PD
(mW)
400
200
100
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃)
B,Apr,2012
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