MMBT1616A

MMBT1616A

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    SOT-23

  • 描述:

    通用三极管 NPN Ic=1A Vceo=60V fT=100MHz P=350mW

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBT1616A 数据手册
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T MMBT1616A TRANSISTOR (NPN) SOT–23 FEATURES z Audio frequency power amplifier z Medium speed switching MARKING:16A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1 A PC Collector Power Dissipation 350 mW Thermal Resistance From Junction To Ambient 357 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RΘJA 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICBO VCB= 60V, IE=0 100 nA Emitter cut-off current IEBO VEB=6V, IC=0 100 nA hFE(1) VCE=2V, IC=100mA 135 hFE(2) VCE=2V, IC=1A 81 DC current gain conditions Min Typ Max Unit 600 Collector-emitter saturation voltage VCE(sat) IC=1A, IB=50mA 0.3 V Collector-emitter saturation voltage VBE(sat) IC=1A, IB=50mA 1.2 V 0.7 V Base-emitter voltage VBE Transition frequency fT Collector output capacitance VCE=2V, IC=50mA 0.6 VCE=2V,IC=100mA, f=100MHz 100 MHz VCB=10V, IE=0, f=1MHz Cob 19 pF CLASSIFICATION OF hFE(1) RANK Y G L RANGE 135~270 200~400 300~600 www.cj-elec.com 1 D,Aug,2015 A,Jun,2014 Typical Characteristics Static Characteristic VCE= 2V o Ta=100 C hFE 0.4 1mA DC CURRENT GAIN COLLECTOR CURRENT hFE —— IC 1000 COMMON EMITTER Ta=25℃ IC (A) 0.5 0.9mA 0.3 0.8mA 0.7mA 0.6mA 0.2 0.5mA o Ta=25 C 100 0.4mA 0.1 0.3mA 0.2mA IB=0.1mA 0.0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCE 10 10 1 VBEsat —— IC 1000 VCEsat —— 200 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=20 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT (V) 800 Ta=25℃ 600 400 Ta=100℃ 100 IC 1000 (mA) IC β=20 150 Ta=100℃ 100 Ta=25℃ 50 200 0 0.1 0 1 10 100 COLLECTOR CURRENT fT —— 400 COLLECTOR CURRENT IC Cob / Cib 1000 —— 600 IC 800 1000 (mA) VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C (pF) 200 C 150 CAPACITANCE TRANSITION FREQUENCY 200 100 (mA) IC fT (MHz) 250 1000 100 100 Cib Cob 10 50 VCE=2V o Ta=25 C 0 20 5 40 60 COLLECTOR CURRENT 80 IC 1 0.1 100 IC——VBE 1000 1 10 REVERSE VOLTAGE (mA) Pc 0.5 —— V 20 (V) Ta COLLECTOR POWER DISSIPATION Pc (W) COLLECTOR CURRENT IC (mA) VCE=2V 100 o Ta=25℃ Ta=100 C 10 1 0.4 0.3 0.2 0.1 0.1 200 0.0 400 600 BASE-EMITTER VOLTAGE www.cj-elec.com 800 1000 0 25 50 75 AMBIENT TEMPERATURE VBE(mV) 2 100 Ta 125 150 (℃ ) D,Aug,2015 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 6° SOT-23 Suggested Pad Layout www.cj-elec.com 3 D,Aug,2015 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 D,Aug,2015 A,Jun,2014
MMBT1616A
物料型号: MMBT1616A

器件简介: 该晶体管是音频频率功率放大器,具有中等速度开关特性。

引脚分配: - 1. 基极 (Base) - 2. 发射极 (Emitter) - 3. 集电极 (Collector)

参数特性: - 集电极-基极电压 (VcBO):120V - 集电极-发射极电压 (VCEO):60V - 发射极-基极电压 (VEBO):6V - 集电极电流 (Ic):1A - 集电极功率耗散 (Pc):350mW - 从结到环境的热阻 (ROJA):357°C/W - 结温 (Tj):150℃ - 存储温度 (Tstg):-55℃ 至 +150℃

功能详解: 包括了电气特性表,列出了各种工作条件下的最小值、典型值和最大值。

应用信息: 适用于音频频率功率放大。

封装信息: SOT-23封装,提供了封装的尺寸和建议的焊盘布局。
MMBT1616A 价格&库存

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MMBT1616A
  •  国内价格
  • 10+0.31343
  • 100+0.25334
  • 600+0.22325
  • 1200+0.21990
  • 3000+0.19444

库存:3218