MMBT3906

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) SOT–23 FEATURES z As complementary type, the NPN transistor z MMBT3904 is Recommended Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Value Units VCBO Symbol Collector-Base Voltage Parameter -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Dissipation 0.2 W RθJA Thermal resistance junction to ambient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE= -10μA, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V, IE=0 -100 nA Collector cut-off current ICEX VCE=-30V, VBE(off)=-3V -50 nA Emitter cut-off current IEBO VEB= -5V, IC=0 -100 nA hFE1 VCE=-1V, IC= -10mA 100 hFE2 VCE= -1V, IC=-50mA 60 hFE3 VCE= -1V, IC=-100mA 30 DC current gain Collector-emitter saturation voltage VCE(sat)1 IC=-50mA, IB=-5mA Base-emitter saturation voltage VBE(sat) IC= -50mA, IB=-5mA Transition frequency fT VCE=-20V,IC=-10mA,f=100MHz Delay Time td Rise Time tr VCC=-3V,VBE=-0.5V IC=-10mA, IB1=IB2=-1mA Storage Time ts Fall Time tf 300 -0.3 -0.95 300 VCC=-3V,IC=-10mA IB1=IB2=-1mA V V MHz 35 nS 35 nS 225 nS 75 nS CLASSIFICATION OF hFE(1) HFE 100-300 RANK L H RANGE 100–200 200–300 D,May,2012 Typical Characterisitics Static Characteristic -80 hFE 200 DC CURRENT GAIN COLLECTOR CURRENT IC Ta=100℃ -350uA -300uA -250uA -200uA -40 —— COMMON EMITTER VCE=-1V COMMON EMITTER Ta=25℃ -400uA -60 hFE 300 -500uA -450uA IC (mA) -100 MMBT3906 -150uA Ta=25℃ 100 -100uA -20 IB=-50uA 0 -0.1 -0 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat -500 —— VCE -20 -1 -0.3 -10 -3 COLLECTOR CURRENT (V) IC VBEsat -1.2 -100 -30 IC -200 (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -300 Ta=100℃ -100 Ta=25℃ -30 Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 -10 β=10 -0.0 -1 -3 -30 -10 COLLECTOR CURRENT IC -100 IC -100 -200 -1 -10 -3 (mA) -100 -30 COLLECTOR CURRENT —— VBE Cob/ Cib 9 —— IC VCB/ VEB f=1MHz IE=0/IC=0 -30 Ta=25℃ Cob (pF) Ta=100℃ Cib C -10 CAPACITANCE IC (mA) COMMON EMITTER VCE=-1V COLLECTOR CURRENT -200 (mA) -3 Ta=25℃ -1 3 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 1 -0.1 -1.2 fT 600 —— IC -1 -3 REVERSE VOLTAGE V -0.3 BASE-EMMITER VOLTAGE VBE (V) PC 250 —— -10 -20 (V) Ta VCE=-20V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 400 200 200 150 100 50 0 -1 -3 -10 COLLECTOR CURRENT -30 IC (mA) -50 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 D,May,2012