MMBT3906M

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors MMBT3906M TRANSISTOR (PNP) SOT-723 FEATURE 3  Complementary to MMBT3904M  Small Package 1 MARKING: 3N 2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted ) 1. BASE 2. EMITTER Parameter Symbol Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Power Dissipation 100 mW Thermal Resistance from Junction to Ambient 1250 ℃/W -55~+150 ℃ RΘJA TJ,Tstg Operation Junction and Storage Temperature Range 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10µA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA,IC=0 -5 V Collector cut-off current ICBO VCB=-40V,IE=0 -100 nA Collector cut-off current ICEX VCE=-30V,VEB(off)=-3V -50 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA hFE(1) VCE=-1V,IC=-10mA 100 hFE(2) VCE=-1V,IC=-50mA 60 hFE(3) VCE=-2V,I C=-100mA 30 DC current gain 300 Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA -0.95 V 300 Transition frequency fT VCE=-20V,IC=-10mA,f=100MHz Delay time td 35 ns Rise time tr VCC=-3V,VBE(off)=-0.5V, IC=-10mA, IB1=IB2=-1mA 35 ns Storage time ts ns tf VCC=-3V,IC=-10mA IB1=IB2=-1mA 225 Fall time 75 ns www.jscj-elec.com 1 MHz Rev. - 2.0 Typical Characteristics Static Characteristic -80 hFE 200 DC CURRENT GAIN COLLECTOR CURRENT IC Ta=100℃ -350uA -300uA -250uA -200uA -40 —— COMMON EMITTER VCE=-1V COMMON EMITTER Ta=25℃ -400uA -60 hFE 300 -500uA -450uA IC (mA) -100 -150uA Ta=25℃ 100 -100uA -20 IB=-50uA 0 -0.1 -0 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat -500 —— VCE -20 -1 -0.3 -10 -3 COLLECTOR CURRENT (V) IC VBEsat -1.2 -100 -30 IC -200 (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -300 Ta=100℃ -100 Ta=25℃ -30 Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 -10 β=10 -0.0 -3 -1 -30 -10 COLLECTOR CURRENT IC -100 IC -100 -200 -1 -10 -3 (mA) -100 -30 COLLECTOR CURRENT —— VBE Cob/ Cib 9 —— IC VCB/ VEB f=1MHz IE=0/IC=0 -30 Ta=25℃ Cob (pF) Ta=100℃ Cib C -10 CAPACITANCE IC (mA) COMMON EMITTER VCE=-1V COLLECTOR CURRENT -200 (mA) -3 Ta=25℃ -1 3 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 1 -0.1 -1.2 fT 600 —— IC -1 -3 REVERSE VOLTAGE V -0.3 BASE-EMMITER VOLTAGE VBE (V) PC 150 —— -10 -20 (V) Ta VCE=-20V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 400 200 100 50 0 -1 -3 -10 COLLECTOR CURRENT www.jscj-elec.com -30 IC 0 -50 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) Rev. - 2.0 SOT-723 Package Outline Dimensions Symbol A A1 b b1 c D E E1 e θ Dimensions In Millimeters Min. Max. 0.430 0.500 0.000 0.050 0.170 0.270 0.270 0.370 0.080 0.150 1.150 1.250 1.150 1.250 0.750 0.850 0.800TYP. 7° REF. Dimensions In Inches Min. Max. 0.017 0.020 0.000 0.002 0.007 0.011 0.011 0.015 0.003 0.006 0.045 0.049 0.045 0.049 0.030 0.033 0.031TYP. 7° REF. SOT-723 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.0 SOT-723 Tape and Reel www.jscj-elec.com 4 Rev. - 2.0