MMBT5550

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T MMBT5550 TRANSISTOR (NPN) SOT–23 FEATURES  High Voltage Transistor MARKING:M1F MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 225 mW Thermal Resistance From Junction To Ambient 556 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 160 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 140 V Emitter-base breakdown voltage V(BR)EBO IE=0.01mA, IC=0 6 V Collector cut-off current ICBO VCB=100V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 50 nA hFE(1) VCE=5V, IC=1mA 60 hFE(2) VCE=5V, IC=10mA 60 hFE(3) VCE=5V, IC=50mA 20 VCE(sat)1 IC=10mA, IB=1mA 0.15 V VCE(sat)2 IC=50mA, IB=5mA 0.25 V VBE(sat)1 IC=10mA, IB=1mA 1 V VBE(sat)2 IC=50mA, IB=5mA 1.2 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 250 *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. www.cj-elec.com 1 B,Oct,2014 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 2 B,Oct,2014 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 3 B,Oct,2014 A,Jun,2014