MMBTA06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR (NPN) SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING 1. BASE 2. EMITTER 3. COLLECTOR 1GM=Device code Solid dot = Green molding compound device. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 4 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W -55～+150 ℃ RΘJA TJ,Tstg Operation Junction and Storage Temperature Range Equivalent Circuit ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 4 V Collector cut-off current ICBO VCB=80V, IE=0 0.1 µA Collector cut-off current ICEO VCE=60V, IB=0 1 µA Emitter cut-off current IEBO VEB=3V, IC=0 0.1 µA hFE(1) VCE=1V, IC=10mA 100 hFE(2) VCE=1V, IC=100mA 100 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1.2 V Transition frequency www.jscj-elec.com fT VCE=2V,IC=10mA, f=100MHz 1 100 MHz Rev. - 2.3 Typical Characteristics Static Characteristic 90 60 VCE=1V COMMON EMITTER Ta=25℃ 500uA 450uA o Ta=100 C hFE (mA) 70 IC 80 DC CURRENT GAIN 400uA 350uA COLLECTOR CURRENT hFE —— IC 500 50 300uA 40 250uA 200uA 30 150uA o Ta=25 C 100 20 100uA 10 IB=50uA 20 0 0 1 2 3 4 5 6 7 COLLECTOR-EMITTER VOLTAGE 8 VCE 9 10 1 VCEsat —— IC 1 10 100 COLLECTOR CURRENT (V) VBEsat —— 10 IC 500 (mA) IC β=10 0.1 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=10 Ta=100℃ Ta=25℃ 0.01 Ta=25℃ 1 Ta=100℃ 0.1 1 10 COLLECTOR CURRENT IC VBE —— 100 500 100 1 10 (mA) IC Cob / Cib 1000 500 100 COLLECTOR CURRENT —— IC (mA) VCB / VEB IC (mA) f=1MHz IE=0 / IC=0 o (pF) CAPACITANCE T= a 25 ℃ T= a 10 0 o C C 10 COLLECTOR CURRENT Ta=25 C 1 0.1 0.0 Cib Cob 10 VCE=1V 0.3 0.6 0.9 BASE-EMITTER VOLTAGE fT —— 1 0.1 1.2 1 IC Pc 0.4 COLLECTOR POWER DISSIPATION Pc (W) fT 100 TRANSITION FREQUENCY 10 REVERSE VOLTAGE VBE(V) (MHz) 300 100 —— V (V) Ta 0.3 0.2 0.1 VCE=2V o Ta=25 C 0.0 10 3 COLLECTOR CURRENT www.jscj-elec.com 70 10 IC 0 (mA) 25 50 75 100 AMBIENT TEMPERATURE 2 125 Ta 150 (℃ ) Rev. - 2.3 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.3 SOT-23 Tape and Reel www.jscj-elec.com 4 Rev. - 2.3