MMDT2227

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors JC(T MMDT2227 DUAL TRANSISTOR (NPN+PNP) SOT-363 FEATURE Epitaxial planar die construction One 2222A NPN One 2907A PNP z Ideal for power amplification and switching z z MARKING: K27 NPN 2222A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10μA, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA.IC=0 6 V Collector cut-off current ICBO VCB= 60V, IE=0 10 nA Collector cut-off current ICEX VCE= 60V,VEB(off)=3V 10 nA Emitter cut-off current IEBO VEB= 3 V, IC=0 10 nA DC current gain hFE(1) * VCE=10V, IC= 0.1mA 35 hFE(2) * VCE=10V, IC= 1mA 50 hFE(3) * VCE=10V, IC= 10mA 75 hFE(4) * VCE=10V, IC= 150mA 100 hFE(5) * VCE=10V, IC= 500mA 40 VCE=1V, IC= 150mA 35 hFE(6) * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency 300 VCE(sat)1 * IC=150mA, IB= 15mA 0.3 V VCE(sat)2 * IC=500mA, IB= 50mA 1 V VBE(sat)1 * IC=150mA, IB=15mA 1.2 V VBE(sat)2 * IC=500mA, IB= 50mA 2 V fT VCE=20V, IC= 20mA, f=100MHz 0.6 300 MHz Output Capacitance Cob VCB=10V, IE=0,f=1MHz 8 pF Input Capacitance Cib VEB=0.5V,IC= 0,f=1MHz 25 pF Noise Figure NF 4 dB VCE=10V, IC=100μA, f=1KHz,Rs=1KΩ pulse test www.cj-elec.com 1 D,Mar,2016 Switching characteristics Symbol Parameter Delay time td Rise time tr Storage time tS Fall time tf Test conditions Min VCC=30V, IC=150mA, VBE(off)=0.5V,IB1=15mA Max Unit 10 ns 25 ns 225 ns 60 ns PNP 2907A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= -10μA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -10 nA Collector cut-off current ICEX VCE=-30V,VEB(off)=-0.5V -50 nA Emitter cut-off current IEBO VEB=-3V, IC=0 -10 nA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(1) * VCE=-10V, IC= -0.1mA 75 hFE(2) * VCE=-10V, IC= -1mA 100 hFE(3) * VCE=-10V, IC=-10mA 100 hFE(4) * VCE=-10V, IC= -150mA 100 hFE(5) * VCE=-10V, IC=-500mA 50 300 VCE(sat)1 * IC=-150mA, IB=-15mA -0.4 V VCE(sat)2 * IC=-500mA, IB=- 50mA -1.6 V VBE(sat)1 * IC=-150mA, IB=-15mA -1.3 V VBE(sat)2 * IC=-500mA, IB= -50mA -2.6 V Transition frequency fT Output Capacitance Cob VCB=-10V, IE= 0,f=1MHz 8 pF Input Capacitance Cib VEB=-2V, IC= 0,f=1MHz 30 pF 10 ns 40 ns 225 ns 60 ns Delay time td Rise time tr Storage time ts Fall time tf VCE=-20V, IC= -50mA,f=100MHz VCC=-30V,IC=-150mA, IB1=-15mA 200 MHz *pulse test www.cj-elec.com 2 D,Mar,2016 SOT-363 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.100 0.150 2.000 2.200 1.150 1.350 2.150 2.400 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.004 0.006 0.079 0.087 0.045 0.053 0.085 0.094 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-363 Suggested Pad Layout www.cj-elec.com 3 D,Mar,2016 SOT-363 Tape and Reel www.cj-elec.com 4 D,Mar,2016