MMDT3904

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T MMDT3904 SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) SOT-363 FEATURES z Epitaxial planar die construction z Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Units VCBO Symbol Collector-Base Voltage Parameter 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.2 TJ Junction Temperature 150 W ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.05 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.05 μA Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.05 μA hFE(1) VCE=1V,IC=0.1mA 40 hFE(2) VCE=1V,IC=1mA 70 hFE(3) VCE=1V,IC=10mA 100 hFE(4) VCE=1V,IC=50mA 60 hFE(5) VCE=1V,IC=100mA 30 VCE(sat)1 IC=10mA,IB=1mA 0.2 V VCE(sat)2 IC=50mA,IB=5mA 0.3 V VBE(sat)1 IC=10mA,IB=1mA 0.85 V VBE(sat)2 IC=50mA,IB=5mA 0.95 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency fT VCE=20V,IC=10mA,f=100MHz 0.65 300 300 MHz Collector output capacitance Cob VCB=5V,IE=0,f=1MHz 4 pF Noise figure NF VCE=5V,Ic=0.1mA,f=1kHz,RS=1KΩ 5 dB Delay time td 35 nS Rise time tr VCC=3V, VBE(off)=-0.5V IC=10mA , IB1=-IB2= 1mA 35 nS Storage time ts 200 nS Fall time tf VCC=3V, IC=10mA IB1=-IB2=1mA 50 nS www.cj-elec.com 1 D,Mar,2016 A,Jun,2014 Typical Characteristics Static Characteristic 14 hFE 56uA 10 49uA 42uA 8 o Ta=100 C 250 DC CURRENT GAIN (mA) 63uA IC COLLECTOR CURRENT VCE= 1V COMMON EMITTER Ta=25℃ 70uA 12 hFE —— IC 300 35uA 6 28uA 21uA 4 14uA 200 150 o Ta=25 C 100 50 2 IB=7uA 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 COLLECTOR-EMITTER VOLTAGE VCE 3.5 0 0.1 4.0 VBEsat —— IC 1.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ 0.6 Ta=100℃ 0.4 10 VCEsat —— 400 β=10 0.8 1 COLLECTOR CURRENT (V) IC 100 (mA) 200 IC β=10 300 200 Ta=100℃ 100 Ta=25℃ 0.2 0.1 0 1 10 COLLECTOR CURRENT 100 IC 1 200 IC—— VBE Pc 300 COLLECTOR POWER DISSIPATION Pc (mW) 100 IC (mA) 100 COLLECTOR CURRENT 200 o Ta=100 C COLLECTOR CURRENT 10 (mA) 10 Ta=25℃ 1 —— IC 200 (mA) Ta 200 100 VCE=1V 0.1 0.3 0 0.4 0.5 0.6 0.7 BASE-EMITTER VOLTAGE www.cj-elec.com 0.8 0.9 1.0 0 25 50 75 AMBIENT TEMPERATURE VBE(V) 2 100 Ta 125 150 (℃ ) D,Mar,2016 A,Jun,2014 SOT-363 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.100 0.150 2.000 2.200 1.150 1.350 2.150 2.400 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.004 0.006 0.079 0.087 0.045 0.053 0.085 0.094 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-363 Suggested Pad Layout www.cj-elec.com 3 D,Mar,2016 A,Jun,2014 SOT-363 Tape and Reel www.cj-elec.com 4 D,Mar,2016 A,Jun,2014