MMDT3904V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors 00'79 !"    DUAL TRANSISTOR˄NPN+NPN) )($785( z Epitaxial planar die construction z Ideal for low power amplification and switching 0$5.,1* KAP  0$;,0805$7,1*67D XQOHVVRWKHUZLVHQRWHG  9DOXH 8QLW 9&%2 6\PERO3DUDPHWHU Collector-Base Voltage 60 V 9&(2 Collector-Emitter Voltage 40 V 9(%2 Emitter-Base Voltage 5 V ,& Collector Current -Continuous 0.2 A 3& Collector Power Dissipation 0.2 W TJ,7VWJ Operation Junction and Storage Temperature Range -55~+150  (/(&75,&$/&+$5$&7(5,67,&67D XQOHVVRWKHUZLVHVSHFLILHG           3DUDPHWHU 6\PERO &ROOHFWRUEDVHEUHDNGRZQYROWDJH  V(BR)CBO IC=10A,IE=0 60 V &ROOHFWRUHPLWWHUEUHDNGRZQYROWDJH  V(BR)CEO IC=1mA,IB=0 40 V (PLWWHUEDVHEUHDNGRZQYROWDJH V(BR)EBO IE=10A,IC=0 5 V &ROOHFWRUFXWRIIFXUUHQW  ICBO VCB=30V,IE=0 0.05 A (PLWWHUFXWRIIFXUUHQW  IEBO VEB=5V,IC=0 0.05 A &ROOHFWRUFXWRIIFXUUHQW  IC VC=30V, = 0.05 A hFE(1) VCE=1V,IC=0.1mA 40 hFE(2) VCE=1V,IC=1mA 70 hFE(3) VCE=1V,IC=10mA 100 hFE(4) VCE=1V,IC=50mA 60 hFE(5) VCE=1V,IC=100mA 30 VCE(sat)1 IC=10mA,IB=1mA 0.2 V VCE(sat)2 IC=50mA,IB=5mA 0.3 V VBE(sat)1 IC=10mA,IB=1mA 0.85 V VBE(sat)2 IC=50mA,IB=5mA 0.95 V '&FXUUHQWJDLQ  &ROOHFWRUHPLWWHUVDWXUDWLRQYROWDJH %DVHHPLWWHUVDWXUDWLRQYROWDJH 7UDQVLWLRQIUHTXHQF\ &ROOHFWRURXWSXWFDSDFLWDQFH fT Cob 'HOD\WLPH td 5LVHWLPH tr 6WRUDJHWLPH t )DOOWLPH tf www.jscj-elec.com 7HVW FRQGLWLRQV 0LQ7\S0D[8QLW VCE=20V,IC=10mA,f=100MHz VCB=5V,IE=0,f=1MHz 0.65 300 300 MHz 4 pF VCC=3V, VBE(off)=-0.5V IC=10mA , IB1=-IB2= 1mA 35 ns 35 ns VCC=3V, IC=10mA IB1=-IB2=1mA 200 ns 1 50 ns Rev. - 2.0 7\SLFDO&KDUDFWHULVWLFV Static Characteristic hFE DC CURRENT GAIN COLLECTOR CURRENT 350uA 300uA 250uA 200uA 40 —— IC COMMON EMITTER VCE=1V COMMON EMITTER Ta=25ć 400uA 60 hFE 400 500uA 450uA 80 IC (mA) 100 150uA Ta=100ć 300 Ta=25ć 200 100 100uA 20 IB=50uA 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1 0.3 IC VBEsat 1.2 30 10 3 COLLECTOR CURRENT (V) IC 100 (mA) IC —— 300 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 600 VCE 0 0.1 20 Ta=100ć 100 Ta=25ć 30 Ta=25ć 0.8 Ta=100ć 0.4 =10 =10 10 0.0 1 10 3 IC 100 100 30 COLLECTOR CURRENT IC 200 1 10 3 (mA) 100 30 COLLECTOR CURRENT —— VBE Cob/ Cib 9 —— IC VCB/ VEB (mA) 10 f=1MHz IE=0/IC=0 Ta=25ć Cib C (pF) Ta=100ć CAPACITANCE COLLECTOR CURRENT IC COMMON EMITTER VCE=1V 30 300 (mA) 3 Ta=25ć 1 3 Cob 0.3 0.1 0.2 0.4 0.6 0.8 1.0 1 0.1 1.2 fT —— IC PC 250 10 3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) 300 1 0.3 —— V 20 (V) Ta VCE=20V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25ć 200 100 200 150 100 50 0 1 3 10 COLLECTOR CURRENT www.jscj-elec.com 30 IC 0 60 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (ć ) Rev. - 2.0 SOT-563 Package Outline Dimensions SOT-563 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.0 SOT-563 Tape and Reel www.jscj-elec.com 4 Rev. - 2.0