MMDT4401

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors JC(T MMDT4401 DUAL TRANSISTOR (NPN+NPN) (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction z Ideal for Low Power Amplification and Switching z MRKING:K2X Maximum Ratings (Ta = 25℃ unless otherwise specified) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO 6 V IC Emitter-Base Voltage Collector Current -Continuous PC Collector Power Dissipation RθJA TJ Tstg Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature 0.6 A 0.2 625 W 150 ℃ -55 to +150 ℃ ℃/W NPN 4401 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC= 100 μA, Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, Emitter-base breakdown voltage V(BR)EBO IE= 100 μA, IC=0 IE=0 IB=0 Min Max Unit 60 V 40 V 6 V Collector cut-off current ICBO VCB= 50 V , IE=0 0.1 μA Collector cut-off current ICEO VCE= 35 V , IB=0 0.5 μA Emitter cut-off current IEBO VEB= 5V , 0.1 μA hFE(1) VCE= 1V, IC= 0.1mA 20 hFE(2) VCE= 1V, IC= 1mA 40 hFE(3) VCE= 1V, IC= 10mA 80 hFE(4) VCE= 1V, IC= 150mA 100 hFE(5) VCE= 2V, IC= 500mA 40 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage IC=0 VCE(sat)1 IC=150 mA, IB= 15mA 0.4 V VCE(sat)2 IC=500 mA, IB= 50mA 0.75 V VBE(sat)1 IC= 150 mA, IB= 15mA 0.95 V VBE(sat)2 IC= 500 mA, IB= 50mA 1.2 V Transition frequency fT VCE= 10V,IC= 20mA,f=100MHz Output capacitance Cob VCB=5V, Delay time td VCC=30V, VBE=2V,IC=150mA ,IB1=15mA Rise time tr Storage time tS Fall time tf www.cj-elec.com 300 IE= 0,f=1MHz VCC=30V, IC=150mA,IB1=-IB2=15mA 1 0.75 250 MHz 6.5 15 pF nS 20 nS 225 nS 30 nS E,Nov,2015 Typical Characteristics Static Characteristic COMMON EMITTER Ta=25℃ 1.0mA 0.9mA 0.8mA 0.7mA IC 200 DC CURRENT GAIN 150 —— IC COMMON EMITTER VCE=1V Ta=100℃ 0.6mA COLLECTOR CURRENT hFE 1000 hFE (mA) 250 0.5mA 0.4mA 100 0.3mA 0.2mA 50 300 Ta=25℃ 100 30 IB=0.1mA 0 1 2 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) 1000 —— 10 0.1 3 VCE IC VBEsat 1.0 Ta=100℃ 10 3 Ta=25℃ 30 100 30 COLLECTOR CURRENT 300 100 1 0.3 (V) BASE-EMMITTER SATURATION VOLTAGE VBEsat (V) 0 IC —— 600 (mA) IC 0.8 Ta=25℃ Ta=100℃ 0.6 β=10 β=10 10 0.4 1 10 3 100 30 COLLECTOR CURRENT IC COLLECTOR CURRENT VBE Cob/ Cib 100 —— 600 100 IC (mA) VCB/ VEB f=1MHz IE=0/IC=0 Ta=25℃ Ta=100℃ Cib C (pF) 100 30 Ta=25℃ 10 10 Cob 3 1 0.2 0.4 0.6 0.8 BASE-EMITTER VOLTAGE fT 1000 —— VBE 1 0.1 1.0 1 0.3 (V) IC PC 250 10 3 REVERSE BIAS VOLTAGE —— V 20 (V) Ta COLLECTOR POWER DISSIPATION PC (mW) (MHz) COMMON EMITTER VCE=10V Ta=25℃ fT TRANSITION FREQUENCY 30 10 (mA) CAPACITANCE IC COLLECTOR CURRENT —— 3 COMMON EMITTER VCE=1V (mA) 600 IC 1 600 300 100 10 COLLECTOR CURRENT www.cj-elec.com IC 150 100 50 0 100 30 200 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) E,Nov,2015 SOT-363 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-363 Suggested Pad Layout www.cj-elec.com 3 E,Nov,2015 SOT-363 Tape and Reel www.cj-elec.com 4 E,Nov,2015