JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JCET
MMDT5451
SOT-363 Plastic-Encapsulate Transistors
6 5
DUAL TRANSISTOR (NPN+PNP)
FEATURES
z
Epitaxial Planar Die Construction
z
Ideal for low Power Amplification and Switching
z
One 5551(NPN), one 5401(PNP)
4
1
2
3
MRKING:KNM
unless otherwise noted)
MAXIMUM RATINGS NPN 5551 (Ta=25
Symbol
Parameter
Value
Units
VCBO
Collector- Base Voltage
180
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
0.2
A
PC
Collector Power Dissipation
0.2
W
R©JA
Thermal Resistance, Junction to Ambient
625
/W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS NPN 5551 (Ta=25 unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
T yp
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100A,IE=0
180
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
160
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10A,IC=0
6
V
Collector cut-off current
ICBO
VCB=120V,IE=0
0.05
A
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.05
A
hFE1
VCE=5V,IC=1mA
80
hFE2
VCE=5V,IC=10mA
100
hFE3
VCE=5V,IC=50mA
30
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
www.cj-elec.com
VCE(sat)
VBE(sat)
Cobo
fT
NF
300
IC=10mA, IB=1mA
0.15
V
IC=50mA, IB=5mA
0.2
V
IC=10mA, IB=1mA
1
V
IC=50mA, IB=5mA
1
V
6.0
pF
300
MHz
8.0
dB
VCB = 10V, f = 1.0MHz, IE = 0
VCE = 10V, IC = 10mA, f = 100MHz
VCE= 5.0V, IC = 200μA,
RS = 1.0k¡f = 1.0kHz
1
100
D,Mar,2016
MAXIMUM RATINGS PNP 5401 (Ta=25
unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector- Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.2
A
PC
Collector Power Dissipation
0.2
W
R©JA
Thermal Resistance, Junction to Ambient
625
/W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS PNP 5401 (Ta=25 unless otherwise specified)
Parameter
Symbol
Test
conditions
M in
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100A,IE=0
-160
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-150
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10A,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-120V,IE=0
-50
nA
Emitter cut-off current
IEBO
VEB=-3V,IC=0
-50
nA
hFE1
VCE=-5V,IC=-1mA
50
hFE2
VCE=-5V,IC=-10mA
100
hFE3
VCE=-5V,IC=-50mA
50
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
www.cj-elec.com
VCE(sat)
VBE(sat)
Cobo
fT
NF
300
IC=-10mA, IB=-1mA
-0.2
V
IC=-50mA, IB=-5mA
-0.5
V
IC=-10mA, IB=-1mA
-1
V
IC=-50mA, IB=-5mA
-1
V
VCB =-10V, f = 1.0MHz, IE = 0
6.0
pF
300
MHz
8.0
dB
VCE =-10V, IC =-10mA, f = 100MHz
VCE=-5.0V, IC =-200μA,
RS = 10¡f = 1.0kHz
2
100
D,Mar,2016
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.
0.150
2.000
2.200
1.150
1.350
2.150
2.4
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.00
0.006
0.079
0.087
0.045
0.053
0.085
0.09
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
www.cj-elec.com
3
D,Mar,2016
www.cj-elec.com
4
D,Mar,2016