MPS2222A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 MPS2222A Plastic-Encapsulate Transistors TO-92 TRANSISTOR (NPN ) 1. EMITTER FEATURE Complementary NPN Type available (MPS2907A) 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10uA , IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , 40 V Emitter-base breakdown voltage V(BR)EBO IE= 10uA, IC=0 6 V Collector cut-off current ICBO VCB= 60V, IE=0 10 nA Collector cut-off current ICEX VCE= 60V,VEB(Off)=3V 10 nA Emitter cut-off current IEBO VEB= 3 V, IC=0 100 nA hFE(1) VCE=10V,IC= 150mA 100 hFE(2) VCE=10V,IC= 0.1mA 40 VCE=10V, IC= 500mA 42 DC current gain * hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage * conditions IB=0 300 VCE(sat)(1) * IC= 500mA, IB=50mA 0.6 V VCE(sat)(2) * IC= 150mA, IB=15mA 0.3 V IC= 500mA, IB= 50mA 1.2 V VBE(sat) * Delay time td VCC=30V, VEB(Off)=-0.5V, 10 nS Rise time tr IC=150mA,IB1=15mA 25 nS Storage time tS 225 nS Fall time tf 60 nS Transition frequency fT VCC=30V,Ic=150mA,IB1=IB2=15mA VCE=20V, IC=20mA, f=100MHz 300 MHz pulse test CLASSIFICATION OF hFE(1) Rank Range L H 100-200 200-300 B,May,2012 Typical Characterisitics MPS2222A 1000 Ta=100℃ hFE 800uA 700uA 120 DC CURRENT GAIN (mA) 900uA IC COLLECTOR CURRENT COMMON EMITTER VCE=10V COMMON EMITTER Ta=25℃ 1mA 160 IC —— hFE Static Characteristic 200 600uA 500uA 80 400uA 300uA Ta=25℃ 100 40 200uA IB=100uA 0 0 10 20 30 40 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE 10 0.1 50 10 100 COLLECTOR CURRENT IC 0.5 1 (V) VBEsat 1.2 —— IC 600 (mA) IC 0.4 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=10 0.3 0.2 Ta=100℃ 0.1 Ta=25℃ Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 0.0 0.0 1 10 100 COLLECTOR CURRENT COLLECTOR CURRENT fT IC 600 (mA) IC —— 300 (MHz) Ta=100℃ 250 fT 100 200 TRANSITION FREQUENCY (mA) 100 COMMON EMITTER VCE=10V IC COLLECTOR CURRENT 600 10 (mA) —— VBE IC 600 IC 1 10 Ta=25℃ 1 150 100 COMMON EMITTER VCE=20V 50 Ta=25℃ 0.1 0.0 0 0.2 0.4 0.6 0.8 1.0 1 10 BASE-EMMITER VOLTAGE VBE (V) 100 Cob/ Cib —— COLLECTOR CURRENT VCB/ VEB PC 750 —— 30 IC 70 (mA) Ta f=1MHz IE=0/IC=0 Ta=25℃ COLLECTOR POWER DISSIPATION PC (mW) 625 CAPACITANCE C (pF) Cib 10 Cob 1 0.1 1 REVERSE VOLTAGE 10 V (V) 500 375 250 125 0 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,May,2012