MPSA13

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA13 TRANSISTOR (NPN) 1.EMITTER FEATURES z Darlington Transistors 2.BASE 3.COLLECTOR 1  MPS23 444 Equivalent Circuit 036$ 'HYLFHFRGH  6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH  LIQRQHWKHQRUPDOGHYLFH ;;; &RGH &('  ,& &  "  ! "-.* "-.* "-./  036$ TO-92 Bulk 1000pcs/Bag 036$7$  72 Tape 2000pcs/Box       #$%&  Collector-Base Voltage 30 V #$'&  Collector-Emitter Voltage 30 V #'%&  Emitter-Base Voltage 10 V $  Collector Current -Continuous 0.5 A Collector Power Dissipation 625 mW  Thermal Resistance I rom Junction Wo Ambient  200  /W "(   ș +  TJ, *  www.jscj-elec.com "    ! # Operation Junction and Storage Temperature Range 1 -55 a  Rev. - 2.0 '5'$ $5$6$ ' $ Ta =25  unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 10 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 A Emitter cut-off current IEBO VEB=10V,IC=0 0.1 A IC=100mA,IB=0.1mA 1.5 V VCE=5V,IC=100mA 2.0 V DC current gain Collector-emitter saturation voltage Base-emitter voltage Current gain-bandwidth product hFE(1) * hFE(2) * VCE(sat) VBE * fT * VCE=5V, IC=10mA 5000 VCE=5V, IC=100mA 10000 VCE=5V,IC=10mA,f=100MHz 125 MHz *Pulse test: pulse width 300s, duty cycle 2.0%. www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics COMMON EMITTER Ta=25ć 2.7uA Ta=25ć hFE 2.1uA 1.8uA 40 1.5uA 1.2uA 0.9uA 20 COMMON EMITTER VCE=5V Ta=100ć 2.4uA 60 IC —— 100K DC CURRENT GAIN (mA) 3.0uA IC COLLECTOR CURRENT hFE Static Characteristic 80 10K 0.6uA IB= 0.3uA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE Ta=100 ć 10 COLLECTOR CURRENT IC —— 1000 500 500 100 (mA) 100 500 (mA) IC Ta=100 ć ȕ=1000 1 10 500 100 COLLECTOR CURRENT Cob/Cib IC (mA) VCB/VEB —— f=1MHz IE=0/IC=0 Ta=25 ć (pF) Cob CAPACITANCE Cib CT 10 100 10 COMMON EMITTER VCE=5V 1 0.0 0.4 0.8 1.2 1.6 1 0.1 2.0 1 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) fT —— IC COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY 100 COMMON EMITTER VCE=5V Ta=25ć 10 3 10 COLLECTOR CURRENT www.jscj-elec.com PC 750 (MHz) 300 fT IC Ta=25ć VBE T =1 00ć a COLLECTOR CURRENT VBEsat —— 20 IC (mA) 500 IC 10 COLLECTOR CURRENT 1500 ȕ=1000 1 1 2000 Ta=25ć 600 400 IC —— T =2 5ć a COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 800 1K 7 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 6 VCE (V) IC (mA) 3 10 (V) 20 Ta 625 500 375 250 125 0 100 —— V 0 25 50 75 100 AMBIENT TEMPERATURE Ta (ć ) 125 150 Rev. - 2.0  &9:"-.*&(   ! A A1 b c D D1 E e e1 L  h (   ( -  4  4 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 &9:**"5 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0  &9:7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0