MPSA14

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA14 TRANSISTOR (NPN) 1.EMITTER FEATURES z Darlington Transistor 2.BASE 3.COLLECTOR 1  MPS23 444 Equivalent Circuit 036$ 'HYLFHFRGH  6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH LIQRQHWKHQRUPDOGHYLFH ;;; &RGH  &('  ,& &  "  ! "-.* "-.* "-./  036$ 72 %XON 1000pcs/Bag 036$7$  72 Tape 2000pcs/Box      #$%&  Collector-Base Voltage 30 V #$'&  Collector-Emitter Voltage 30 V #'%&  Emitter-Base Voltage 10 V $  Collector Current -Continuous 0.5 A Collector Power Dissipation 625 mW  Thermal Resistance I rom Junction Wo Ambient  200  /W "(   ș +  TJ, *  www.jscj-elec.com "    ! # Operation Junction and Storage Temperature Range 1 -55 a  Rev. - 2.0 '5'$ $5$6$ ' $ Ta =25  unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 10 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 A Emitter cut-off current IEBO VEB=10V,IC=0 0.1 A IC=100mA,IB=0.1mA 1.5 V VCE=5V,IC=100mA 2.0 V DC current gain Collector-emitter saturation voltage hFE(1) * hFE(2) * VCE(sat) Base-emitter voltage VBE Transition frequency fT * * VCE=5V, IC=10mA 10000 VCE=5V, IC=100mA 20000 VCE=5V,IC=10mA,f=100MHz 125 MHz *Pulse test: pulse width 300s, duty cycle 2.0%. www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics hFE Static Characteristic 120 100 2.7uA 2.4uA 80 2.1uA 1.8uA 60 1.5uA 1.2uA 40 0.9uA 20 COMMON EMITTER VCE=5V Ta=100ć 100K DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 3.0uA IC —— 200K COMMON EMITTER Ta=25ć Ta=25ć 10K 0.6uA IB= 0.3uA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE Ta=25ć 600 Ta=100 ć 10 COLLECTOR CURRENT IC 500 —— 10 COLLECTOR CURRENT VBEsat IC (mA) 1000 500 (mA) IC 500 Ta=100 ć ȕ=1000 1 10 VBE 500 100 COLLECTOR CURRENT Cob/Cib 20 IC (mA) VCB/VEB —— f=1MHz IE=0/IC=0 Ta=25 ć 10 T =1 00ć a (pF) 100 Cib CAPACITANCE CT 10 Cob COMMON EMITTER VCE=5V 1 0.0 0.4 0.8 1.2 1.6 1 0.1 2.0 1 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) —— IC 100 COMMON EMITTER VCE=5V Ta=25ć 10 3 10 COLLECTOR CURRENT www.jscj-elec.com PC 750 COLLECTOR POWER DISSIPATION PC (mW) fT 200 TRANSITION FREQUENCY fT (MHz) 100 Ta=25ć 500 100 —— IC 1500 ȕ=1000 1 1 2000 T =2 5ć a COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) IC —— 800 400 COLLECTOR CURRENT IC (mA) 1K 7 VCE (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 6 IC (mA) 3 10 (V) 20 Ta 625 500 375 250 125 0 100 —— V 0 25 50 75 100 AMBIENT TEMPERATURE Ta (ć ) 125 150 Rev. - 2.0  &9:"-.*&(   ! A A1 b c D D1 E e e1 L  h (   ( -  4  4 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 &9:**"5 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0  &9:7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0