P6SMB33A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SMBG Plastic-Encapsulate Diodes P6SMB SERIES Transient Voltage Suppressor Diodes Features ● PPP 600W ● VRWM 5.8V- 513V SMBG ● Glass passivated chip Applications ● Clamping Voltage Marking Bi-directional ● P6SMB XXCA/XXA Uni-direction XX : From 6.8 To 600 Symbol Unit Conditions Peak pulse power dissipation PPPM W with a 10/1000us waveform 600 Peak pulse current (1) IPPM A with a 10/1000us waveform See Next Table PD W On infinite heat sink at TL=75℃ 5.0 IFSM A 8.3 ms single half sine-wave unidirectional only 100 TJ,TSTG ℃ Item Power dissipation Peak forward surge current(2) Operating junction and storage temperature range Max -55 to +150 Electrical Characteristics（Ta=25℃ Unless otherwise specified） Item Symbol Unit Conditions Max Maximum instantaneous forward Voltage (3) VF V at 35A for unidirectional only 3.5/5.0 RθJL ℃/W junction to lead 20 RθJA ℃/W junction to ambient， LLead = 10 mm 100 Thermal resistance Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA= 25℃per Fig.2. (2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal (3) VF