PXT3904

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT3904 TRANSISTOR (NPN) 1. BASE FEATURES z Compliment to PXT3906 z Low current z Low voltage 2. COLLECTOR 1 2 3 3. EMITTER MARKING: 1A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ V ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 60 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 Emitter cut-off current IEBO VEB=6V,IC=0 0.05 μA Collector ut-off current ICEX hFE(1) VCE=30V,VBE(off)=3V VCE=1V,IC=0.1mA 0.05 μA hFE(2) VCE=1V,IC=1mA 80 hFE(3) VCE=1V,IC=10mA 100 hFE(4) VCE=1V,IC=50mA 60 30 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency hFE(5) VCE=1V,IC=100mA VCE(sat)1 IC=10mA,IB=1mA VCE(sat)2 IC=50mA,IB=5mA VBE(sat)1 IC=10mA,IB=1mA VBE(sat)2 IC=50mA,IB=5mA V 0.05 μA 60 0.65 300 0.2 V 0.3 V 0.85 V 0.95 VCE=20V,IC=10mA,f=100MHz Collector capacitance Cc VCB=5V,IE=0,f=1MHz 4 pF Emitter capacitance Ce VEB=0.5V,IC=0,f=1MHz 8 pF Noise figure NF VCE=5V,Ic=0.1mA,f=10Hz-15.7kHz, RS=1KΩ 5 dB 35 ns Delay time td Rise time tr Storage time tS Fall time tf IC=10mA , IB1=-IB2= 1mA 300 V fT MHz 35 ns 200 ns 50 ns A,May,2011