RB160M-40

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes RB160M-40 Schottky Barrier Diodes SOD-123 FEATURES z Small surface mounting type z Low forward voltage z High reliability MARKING: 74 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits DC reverse voltage VR 40 V Mean rectifying current IO 1 A IFSM 15 A PD 350 mW Thermal Resistance Junction to Ambient RθJA 200 ℃/W Junction temperature Tj 125 ℃ Storage temperature Tstg Non-repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Unit ℃ -55~+150 Electrical Ratings @TA=25℃ Parameter Symbol Forward voltage VF Reverse current IR www.cj-elec.com Min. Typ. Max. Unit 0.51 V 30 1 μA Conditions IF=1A VR=40V E,Mar,2015 Typical Characteristics Forward 2 Characteristics Reverse 10 Characteristics 1 0.1 Ta=100 ℃ (mA) T= a 25 ℃ REVERSE CURRENT IR T= a 10 0 FORWARD CURRENT IF ℃ (A) 1 0.1 0.01 Ta=25 ℃ 1E-3 0.01 0.0 1E-4 0.2 0.4 FORWARD VOLTAGE 0.6 VF 0.8 0 10 20 30 REVERSE VOLTAGE (V) Capacitance Characteristics 40 (V) Power Derating Curve 400 300 VR Ta=25℃ f=1MHz (mW) 300 PD 200 POWER DISSIPATION JUNCTION CAPACITANCE CJ (pF) 250 150 100 200 100 50 0 0 0 5 10 REVERSE VOLTAGE www.cj-elec.com 15 VR 20 0 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 (℃ ) E,Mar,2015 SOD-123 Package Outline Dimensions Dimensions In Millimeters Max Min 1.050 1.250 0.000 0.100 1.050 1.150 0.450 0.650 0.080 0.150 1.500 1.700 2.600 2.800 3.550 3.850 0.500 REF 0.250 0.450 0° 8° Symbol A A1 A2 b c D E E1 L L1 θ Dimensions In Inches Min Max 0.041 0.049 0.000 0.004 0.041 0.045 0.018 0.026 0.003 0.006 0.059 0.067 0.102 0.110 0.140 0.152 0.020 REF 0.010 0.018 0° 8° SOD-123 Suggested Pad Layout www.cj-elec.com 3 E,Mar,2015 SOD-123 Tape and Reel www.cj-elec.com 4 E,Mar,2015