RB501V-40

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 RB501V -40 Schottky Barrier Diode FEATURES z Low current rectifier schottky diode z Low voltage, low inductance z For power supply M MAKING: 4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A IFSM 1 A Peak forward surge current Power dissipation Unit PD 200 mW RθJA 500 ℃/W Junction temperature Tj 125 ℃ Storage temperature Tstg Thermal Resistance Junction to Ambient ℃ -55~+150 Electrical Ratings @Ta=25℃ Parameter Symbol Min Typ Max Unit Conditions Forward voltage VF 0.55 0.34 V IF=100mA IF=10mA Reverse current IR 30 μA VR=10V Capacitance between terminals CT pF VR=10V, f=1MHZ 6 B,Jul,2012