RB551V-30

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 RB551V-30 Schottky Barrier Diode FEATURES z Low current rectifier schottky diode z Low voltage, low inductance z For power supply MAKING: D Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Peak reverse voltage VRM 30 V DC reverse voltage VR 20 V Mean rectifying current IO 0.5 A IFSM 2 A Pd 250 mW RθJA 400 ℃/W Junction temperature Tj 125 ℃ Storage temperature Tstg -55~+150 ℃ Peak forward surge current Power dissipation Thermal resistance junction to ambient Electrical Ratings @Ta=25℃ Parameter Symbol Min Typ Max Unit Conditions Forward voltage VF 0.36 0.47 V IF=100mA IF=500mA Reverse current IR 100 μA VR=20V B,Aug,2012 RB551V-30 Typical Characteristics Forward 1000 Characteristics Reverse 1000 Characteristics o C (uA) 100 REVERSE CURRENT IR C o 10 Ta =2 5 FORWARD CURRENT IF Ta =1 00 o (mA) Ta=100 C 100 1 0.1 0.0 0.1 0.2 0.3 FORWARD VOLTAGE 0.4 VF 0.5 10 o Ta=25 C 1 0.1 0.6 0 5 (V) 10 15 REVERSE VOLTAGE 20 VR 25 30 125 150 (V) Derating Curve Capacitance Characteristics 1000 0.6 Ta=25℃ f=1MHz 0.4 (A) 100 IO CURRENT CAPACITANCE BETWEEN TERMINALS CT (pF) 0.5 10 0.3 0.2 0.1 1 0.1 1 REVERSE VOLTAGE 10 VR 100 (V) 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) B,Aug,2012